2023
DOI: 10.1134/s1063739723700415
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Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor

D. Tsunvaza,
R. V. Ryzhuk,
I. S. Vasil’evskii
et al.

Abstract: This paper studies the design of a nonlinear model of AlGaAs/InGaAs/GaAs рHEMT microwave-frequency range transistors with a gate length of 0.15 µm using parametric analysis methods. In the calculations, not only nonlinear current sources but also the dependences of the nonlinear gate-source and gate-drain capacitances on voltages are studied. It is shown that the proposed model makes it possible to describe the IV characteristics of the studied device adequately in the range of drain currents from 0 to 100 mA … Show more

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