Design of a Novel Micro-Laser Formed by Monolithic Integration of a III-V Pillar With a Silicon Photonic Crystal Cavity

Wang, Zhechao; Tian, Bin; Thourhout, Dries Van

doi:10.1109/jlt.2013.2252600

Cited by 5 publications

(7 citation statements)

References 36 publications

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“…Analogous values for the absolute reflection coefficients of the different modes have been demonstrated. Three-dimensional FDTD calculations also show the impact of length on the Q factor of the resonant modes (Table 2), and cavity lengths greater than 5 µm favor the creation of strong resonant modes [98]. Recently, it has been demonstrated that a single nanowire cavity with a triangular cross section lying on an SiO 2 substrate [90] can also sustain high-Q FP resonance, with Q close to 500 for the TE-like mode.…”

Section: (A) Waveguiding Mechanism and Bare Resonatorsmentioning

confidence: 89%

“…single nanowire with a dielectric constant close to that of ZnO, GaN, and CdS at the lasing frequencies, in the more realistic case of a nanowire standing on a substrate [98]. Quality factors up to several hundreds can be achieved for both the HE 11 and TE 01 modes in appropriately sized cavities.…”

Section: (A) Waveguiding Mechanism and Bare Resonatorsmentioning

confidence: 99%

“…Wang et al analyzed the lasing performances of a microlaser design similar to that proposed by Larrue et al [52], where an InGaAs/InP pillar was embedded in a silicon PhC cavity [100,101]. By overcoming barriers to the epitaxy of high-quality III-V materials on silicon (001) substrates, on-chip lasers formed by integrating an individual nanowire inside a PhC cavity could become a potential building block for low-power integrated sources that have to date been missing from the silicon platform.…”

Section: (D) External Cavity Engineeringmentioning

confidence: 99%

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Nanowire Lasers

et al. 2015

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Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione-dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, and wavelength tunability. Next, we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers in many applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

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Section: (A) Waveguiding Mechanism and Bare Resonatorsmentioning

confidence: 89%

Section: (A) Waveguiding Mechanism and Bare Resonatorsmentioning

confidence: 99%

Section: (D) External Cavity Engineeringmentioning

confidence: 99%

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Nanowire Lasers

et al. 2015

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“…In the past decade, lasing has been demonstrated in numerous wavelength and sub-wavelength scale structures, including dielectric micro-discs [1][2][3][4], photonic crystals [5][6][7][8][9], nanowires [10,11] and nanorods [12], nano-membranes [13][14][15], micro-pillars [16][17][18], and metal-clad nano-cavities [19][20][21][22][23][24]. While all these devices enable fundamental research of various nanoscale phenomena [25][26][27], the design and analysis of nanolasers have focused almost exclusively on the optical mode, i.e., pure electromagnetic (EM) consideration, usually at 4.5 K, 77 K and room temperature.…”

Section: Introductionmentioning

confidence: 99%

Temperature effects in metal-clad semiconductor nanolasers

Smalley

Shane

et al. 2015

Nanophotonics

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Abstract:As the field of semiconductor nanolasers becomes mature in terms of both the miniaturization to the true sub-wavelength scale, and the realization of room temperature devices, the integrated treatment of multiple design aspects beyond pure electromagnetic consideration becomes necessary to further advance the field. In this review, we focus on one such design aspect: temperature effects in nanolasers. We summarize recent efforts in understanding the interplay of various temperaturedependent parameters, and study their effects on optical mode and emission characteristics. Building on this knowledge, nanolasers with improved thermal performance can be designed, and their performance evaluated. Although this review focuses on metal-clad semiconductor lasers because of their suitability for dense chip-scale integration, these thermal considerations also apply to the broader field of nanolasers.

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“…Since the observation of the Purcell effect in semiconductor cavities, lasing has been demonstrated in numerous wavelength-and subwavelength-scale structures. These structures include dielectric microdisks [16][17][18][19], photonic crystals [10,[20][21][22][23], nanowires [24,25], nanomembranes [26][27][28], micropillars [29][30][31], and metal-clad cavities [13,[32][33][34][35][36].…”

Section: Introductionmentioning

confidence: 99%

Subwavelength semiconductor lasers for dense chip-scale integration

Smalley

Nezhad

et al. 2014

Adv. Opt. Photon.

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Metal-clad subwavelength lasers have recently become excellent candidates for light sources in densely packed chip-scale photonic circuits. In this review, we summarize recent research efforts in the theory, design, fabrication, and characterization of such lasers. We detail advancements of both the metallodielectric and the coaxial type lasers: for the metallo-dielectric type, we discuss operation with both optical pumping and electrical pumping. For the coaxial type, we discuss operation with all spontaneous emission coupled into the lasing mode, as well as the smallest metal-clad lasers to date operating at room temperature. A formal treatment of the Purcell effect, the modification of the spontaneous emission rate by a subwavelength cavity, is then presented to assist in better understanding the quantum effects in these nanoscale semiconductor lasers. This formalism is developed for the transparent medium condition, using the emitter-field-reservoir model in the quantum theory of damping. We show its utility through the analysis and design of subwavelength lasers. Finally, we discuss future research directions toward high-efficiency nanolasers and potential applications, such as creating planar arrays of uncoupled lasers with emitter densities near the resolution limit.

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Design of a Novel Micro-Laser Formed by Monolithic Integration of a III-V Pillar With a Silicon Photonic Crystal Cavity

Cited by 5 publications

References 36 publications

Nanowire Lasers

Nanowire Lasers

Temperature effects in metal-clad semiconductor nanolasers

Subwavelength semiconductor lasers for dense chip-scale integration

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