In this paper, systematic analysis on the digital microphone is performed using Energy Dispersive X-ray Spectroscopy (EDS) and Transmission Kikuchi diffraction (TKD) in the Scanning Electron Microscopy (SEM). Digital microphone is an integrated chip composed of Complementary Metal-Oxide Semiconductor (CMOS) and Micro-ElectroMechanical Systems (MEMS). Using EDS, quantitative chemical composition and elemental maps on the integrated CMOS-MEMS-based microchip were obtained. Microanalytical X-Ray technique along with TKD was applied to reveal the nanostructure of the MEMS region, i.e., diaphragm membrane and then the CMOS region, i.e., tungsten through-silicon via (W-TSV). Device performance and lifetime was correlated to chemical diffusions, metal interface boundaries, grain structures and phases existing at CMOS and MEMS junctions. Our results demonstrated that SEM-based TKD with EDS is a powerful microstructural characterization tool and performs vital role in failure analysis for device optimization.
Topic -MEMS/NEMS
Index Terms/Keywords-Energy Dispersive X-ray Spectroscopy (EDS), Scanning Electron Microphone (SEM), Transmission Kikuchi Diffraction (TKD), Complementary Metal-Oxide Semiconductor (CMOS), Micro-Electro-Mechanical Systems (MEMS), through-silicon via (TSV).