2013
DOI: 10.1109/tvlsi.2011.2176968
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Design of a Practical Nanometer-Scale Redundant Via-Aware Standard Cell Library for Improved Redundant Via1 Insertion Rate

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Cited by 4 publications
(6 citation statements)
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“…1 (b), the rectangle-via can be used for redundant via insertion in 65nm or beyond processes. Note that characterization of vias depends on offerings of foundries [10]. As illustrated in [10], this discussion also assurnes the (2) where Ev and Erv denote the enclosure of via and rectangIe via; SV1 and RV1 represent the length of via and rectangIe via; Sv-v is the minimum spacing between two vias, respectively.…”
Section: B Standard Cell Design and Layout Limitationmentioning
confidence: 91%
See 4 more Smart Citations
“…1 (b), the rectangle-via can be used for redundant via insertion in 65nm or beyond processes. Note that characterization of vias depends on offerings of foundries [10]. As illustrated in [10], this discussion also assurnes the (2) where Ev and Erv denote the enclosure of via and rectangIe via; SV1 and RV1 represent the length of via and rectangIe via; Sv-v is the minimum spacing between two vias, respectively.…”
Section: B Standard Cell Design and Layout Limitationmentioning
confidence: 91%
“…Note that characterization of vias depends on offerings of foundries [10]. As illustrated in [10], this discussion also assurnes the (2) where Ev and Erv denote the enclosure of via and rectangIe via; SV1 and RV1 represent the length of via and rectangIe via; Sv-v is the minimum spacing between two vias, respectively. Note that different foundries have their own design rules, especially the dimensions of via enclosure and spacing within metals may be different as shown in Figs.…”
Section: B Standard Cell Design and Layout Limitationmentioning
confidence: 91%
See 3 more Smart Citations