Design of a UHV reactor for microwave plasma deposition of diamond films

Jubber, M. G.; Wilson, J. I. B.; Drummond, Ian; Milne, David

doi:10.1016/0042-207x(94)90242-9

Cited by 23 publications

(5 citation statements)

References 15 publications

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“…53 The process conditions used for the microwave-assisted hydrogen plasma treatment of the diamond samples are given in Table 1 using UHV 2.45 GHz microwave plasma equipment. 54 The surface temperature of the grounded substrate was measured by a calibrated dual-wavelength pyrometer (Vanzetti model EITM2) operating at 1168 nm and 1250 nm, with a spot diameter of 0.38 cm at a working distance of 30 cm and a temperature resolution of Z 1% with a response time of 100 milliseconds.…”

Section: Methodsmentioning

confidence: 99%

Hydrogen plasma interaction with (100) diamond surfaces

Stoikou

2011

Phys. Chem. Chem. Phys.

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Polycrystalline diamond films exhibiting (100) oriented surfaces have been subject to a low pressure hydrogen plasma for durations up to 20 h. The topography of spatially defined 20 × 20 μm areas of the samples were imaged by atomic force microscopy at intervals during the plasma exposure. The mean surface roughness of individual (100) crystallites decreased from ca. 2.4 nm to <1 nm over the period and was independent of the twist and tilt angles of the crystallite. Whilst small hillock growth features were etched completely by the plasma treatment, there was no evidence for etch pits evident in similar experiments carried out with (100) natural diamond. Very low lateral etch rates of the (100) crystallites of 28 ± 4 nm/h were measured for crystallites bounded by (111) planes. High resolution XPS analysis of the C(1s) and O(1s) transitions of the same samples showed that the surface graphitic phase, present in the as-prepared samples, was removed to below detectable limits. The surface oxygen content was reduced from around 9-10% to ca. 3% after prolonged plasma exposure. The C(1s) and O(1s) band contours revealed the presence of oxygen in the form of ether and carbonyl functional groups. The ether:carbonyl: areal density ratio on (100) crystallites decreased only slightly from 83:17 to 64:37 after 20 h of plasma treatment based on fitting of the O(1s) band envelope. Etching products arising from the plasma interaction with the diamond surface were not detected by either optical emission spectroscopy or mass spectrometry.

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Section: Methodsmentioning

confidence: 99%

Hydrogen plasma interaction with (100) diamond surfaces

Stoikou

2011

Phys. Chem. Chem. Phys.

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“…1,2 In the initial carburization stage, the silicon wafer is treated for about 3 h in a 2.0% methane in hydrogen plasma at a low pressure of 35 Torr and a microwave power of 500 W. Removal of surface oxide and the formation of a silicon carbide layer on the substrate surface are believed to occur during the pretreatment process. The subsequent biasing nucleation stage is performed at a lower microwave power of 175 W with the gas pressure reduced to 22 Torr.…”

Section: Methodsmentioning

confidence: 99%

Characterization of the surface morphology and electronic properties of microwave enhanced chemical vapor deposited diamond films

Fitzgerald

Fan

Troupe

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The surface morphology, electronic structure and atomic bonding configurations of chemical vapor deposition ͑CVD͒ diamond films prepared at different stages of the deposition process and subjected to different postdeposition surface treatments have been studied by scanning probe microscopy ͑SPM͒, scanning tunneling spectroscopy ͑STS͒, and x-ray photoelectron spectroscopy ͑XPS͒ surface analysis techniques. SPM image observations show that ͑a͒ in the biasing nucleation process, diamond crystallites grow in a three-dimensional manner and the nucleation density reaches 10 9 -10 10 /cm 2 ; ͑b͒ both as-deposited and boron ion implanted films exhibit a hillock morphology on ͑100͒ crystal faces; ͑c͒ atomic flatness can be achieved on crystal faces by hydrogen plasma etching. STS analysis indicates that ͑i͒ the films obtained after an initial biasing nucleation process show a metallic tunneling behavior; ͑ii͒ both as-deposited and hydrogen plasma etched CVD diamond films possess typical p-type semiconductor surface electronic properties; ͑iii͒ when the as-deposited diamond films are subjected to boron implantation or argon ion etching, the surface electronic properties change from p-type semiconducting behavior to metallic behavior. XPS analysis confirmed that the surfaces for both as-deposited and hydrogen plasma etched diamond films have a tetrahedral atomic bonding configuration. However, the surfaces of boron ion implanted and argon ion etched diamond films exhibited an amorphous carbon-like feature which can be attributed to the surface damage caused by ion bombardment.

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“…The diamond ®lms were prepared by 2.45 GHz microwave plasma enhanced chemical vapour deposition [1]. The growth of heteroepitaxial diamond on silicon substrate is a three stage process [2 ± 3].…”

Section: Methodsmentioning

confidence: 99%

Scanning Probe Microscopy and Spectroscopy of CVD Diamond Films

et al. 2000

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The surface morphology and electronic properties of as-deposited CVD diamond ®lms and the diamond ®lms which have been subjected to boron ion implantation or hydrogen plasma etching have been systematically studied by high resolution scanning probe microscopy and spectroscopy techniques. AFM and STM image observations have shown that (a) both the as-deposited CVD diamond ®lms and the boron ion implanted ®lms exhibit similar hillock morphologies on (100) crystal faces and these surface features are formed during the deposition process; (b) boron ion implantation does not cause a discernible increase in surface roughness; (c) atomic¯atness can be achieved on crystal faces by hydrogen plasma etching of the ®lm surface. Scanning tunnelling spectroscopy analysis has indicated that (a) the as-deposited diamond ®lms and the hydrogen plasma etched diamond ®lms possess typical p-type semiconductor surface electronic properties; (b) the as-deposited diamond ®lms subjected to boron implantation exhibit surface electronic properties which change from p-type semiconducting behaviour to metallic behaviour; (c) the damage in the boron implanted diamond ®lms is restricted to the surface layers since the electronic properties revert to p-type on depth pro®ling.Key words: CVD diamond ®lms; surface morphology and electronic structure; scanning probe microscopy and spectroscopy.

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Design of a UHV reactor for microwave plasma deposition of diamond films

Cited by 23 publications

References 15 publications

Hydrogen plasma interaction with (100) diamond surfaces

Hydrogen plasma interaction with (100) diamond surfaces

Characterization of the surface morphology and electronic properties of microwave enhanced chemical vapor deposited diamond films

Scanning Probe Microscopy and Spectroscopy of CVD Diamond Films

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