Design of a voltage‐programmed
            <i>V</i>
            <sub>TH</sub>
            compensating pixel circuit for AMOLED displays using diode‐connected a‐IGZO TFT

Singh, Abhilasha; Goswami, Manish; Kandpal, Kavindra

doi:10.1049/iet-cds.2020.0070

Cited by 9 publications

(2 citation statements)

References 20 publications

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“…As shown in Figure 1, AMOLEDs use independent thin-film transistors to control each pixel, so that each pixel can be continuously and independently driven and lit. Therefore, AMOLED is suitable for large and high-resolution displays, and has high application prospects for the displays [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

A Pixel Circuit for Compensating Electrical Characteristics Variation and OLED Degradation

Wei

Chu

et al. 2023

Micromachines

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In recent years, the active-matrix organic light-emitting diode (AMOLED) displays have been greatly required. A voltage compensation pixel circuit based on an amorphous indium gallium zinc oxide thin-film transistor is presented for AMOLED displays. The circuit is composed of five transistors–two capacitors (5T2C) in combination with an OLED. In the circuit, the threshold voltages of both the transistor and the OLED are extracted simultaneously in the threshold voltage extraction stage, and the mobility-related discharge voltage is generated in the data input stage. The circuit not only can compensate the electrical characteristics variation, i.e., the threshold voltage variation and mobility variation, but also can compensate the OLED degradation. Furthermore, the circuit can prevent the OLED flicker, and can achieve the wide data voltage range. The circuit simulation results show that the OLED current error rates (CERs) are lower than 3.89% when the transistor’s threshold voltage variation is ±0.5V, lower than 3.49% when the mobility variation is ±30%.

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Section: Introductionmentioning

confidence: 99%

A Pixel Circuit for Compensating Electrical Characteristics Variation and OLED Degradation

Wei

Chu

et al. 2023

Micromachines

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“…where I D is the drain current, µ the mobility, C i the unit-area gate capacitance, W and L the channel width and length, V GS the gate voltage, and V T the threshold voltage. The W/L ratio defined by the patterns of electrodes is influenced by the precision of source and drain electrode fabrication, and therefore high-precision photolithography and printing equipment and/or special control of patterning processes are important [21,22]. As for the dielectric layer, its thickness affects the unit-area capacitance, therefore directly influencing the drain current, as well as in an indirect way by altering threshold voltage [23].…”

Section: Introductionmentioning

confidence: 99%

Ferris-wheel-assisted parylene-C dielectric deposition for improving organic thin-film transistor uniformity

Guo¹,

Geng²,

Zhong³

et al. 2022

Flex. Print. Electron.

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Organic thin film transistor is one of the most promising electronic device technologies for flexible and printed electronics, but device uniformity remains a challenge for large-scale integration circuit design. Despite the advances in semiconductor layers, the quality of dielectric layers is equally important. Parylene-C dielectric has good intrasample thickness uniformity, but demonstrates significant variation among samples fabricated at the same time, thus causing device non-uniformity. In this study, we present a two-dimensional (2D) sample rotation method using a Ferris wheel to improve the thickness uniformity of parylene-C dielectrics. The Ferris wheel averages the deposition rate of parylene-C dielectric on different samples over an identical spherical space, rather than over different horizontal planes by the conventional one-dimensional sample rotation with a rack. The dielectrics fabricated on different cabins of the Ferris wheel demonstrate better thickness uniformity than those fabricated on different floors of the rack, and thus better uniformity of transistors. Specifically, using the 2D rotation Ferris wheel, the coefficient of variation of dielectric thickness is lowered to 0.01 from 0.12 (which uses the conventional rack); the coefficients of variation for the on-state drain current, process transconductance parameter, and threshold voltage of the fabricated transistors are improved to 0.15, 0.16 and 0.08, from 0.33, 0.20 and 0.14, respectively. The improved device uniformity has the potential in complicated flexible circuit design for advanced applications such as edge intelligence.

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P‐13.8: Evaluation of the Structure‐Capacitance Relationship in OLED Device and the Influence of Capacitance Variation on Pixel Circuit

Zhang¹,

Chen²,

Wu³

et al. 2021

Symp Digest of Tech Papers

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Over the past years, active‐matrix organic light‐emitting diode (AMOLED) has established a commanding position in displays for smart phones, smart watches and TVs. However, AMOLED display still faces challenges in pursuing high‐level performance as TFT and/or OLED suffer device‐level variation and dynamic shifting resulting from the aging effect. Thus, a variety of internal compensation circuits, which are designed to partially compensate these harmful variation and dynamic shifting, have been implemented into pixel circuits of AMOLED products. Previous studies have mainly focused on the instability of TFT device, however the capacitance of OLED device could also affect the overall compensation effect. In this study, the structure‐capacitance relationship of OLED device is systematically presented and the influence of capacitance variation on the pixel circuits at compensation stage is also discussed.

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Design of a voltage‐programmed V _TH compensating pixel circuit for AMOLED displays using diode‐connected a‐IGZO TFT

Cited by 9 publications

References 20 publications

A Pixel Circuit for Compensating Electrical Characteristics Variation and OLED Degradation

A Pixel Circuit for Compensating Electrical Characteristics Variation and OLED Degradation

Ferris-wheel-assisted parylene-C dielectric deposition for improving organic thin-film transistor uniformity

P‐13.8: Evaluation of the Structure‐Capacitance Relationship in OLED Device and the Influence of Capacitance Variation on Pixel Circuit

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Design of a voltage‐programmed V TH compensating pixel circuit for AMOLED displays using diode‐connected a‐IGZO TFT

Cited by 9 publications

References 20 publications

A Pixel Circuit for Compensating Electrical Characteristics Variation and OLED Degradation

A Pixel Circuit for Compensating Electrical Characteristics Variation and OLED Degradation

Ferris-wheel-assisted parylene-C dielectric deposition for improving organic thin-film transistor uniformity

P‐13.8: Evaluation of the Structure‐Capacitance Relationship in OLED Device and the Influence of Capacitance Variation on Pixel Circuit

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Design of a voltage‐programmed V _TH compensating pixel circuit for AMOLED displays using diode‐connected a‐IGZO TFT