2020
DOI: 10.1117/1.jpe.10.025503
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Design of an indium arsenide cell for near-field thermophotovoltaic devices

Abstract: An indium arsenide photovoltaic cell with gold front contacts is designed for use in a nearfield thermophotovoltaic (NF-TPV) device consisting of millimeter-size surfaces separated by a nanosize vacuum gap. The device operates with a doped silicon radiator maintained at a temperature of 800 K. The architecture of the photovoltaic cell, including the emitter and base thicknesses, the doping level of the base, and the front contact grid parameters, are optimized for maximizing NF-TPV power output. This is accomp… Show more

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Cited by 20 publications
(10 citation statements)
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“…A nanoscale vacuum gap (d) separates the emitter and the cell. While the method presented here is general, an InAs p-n junction is chosen as the active region due to its narrow bandgap (Eg = 0.354 eV at room temperature) and high quantum efficiency [25,26]. The p-doped and n-doped InAs layers with thicknesses dp and dn are subdivided by a nonuniform mesh to determine the local photogeneration rate and to solve the charge transport equations.…”
Section: Methodsmentioning
confidence: 99%
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“…A nanoscale vacuum gap (d) separates the emitter and the cell. While the method presented here is general, an InAs p-n junction is chosen as the active region due to its narrow bandgap (Eg = 0.354 eV at room temperature) and high quantum efficiency [25,26]. The p-doped and n-doped InAs layers with thicknesses dp and dn are subdivided by a nonuniform mesh to determine the local photogeneration rate and to solve the charge transport equations.…”
Section: Methodsmentioning
confidence: 99%
“…[44] without considering the free-carrier contributions. Free-carrier contributions were included by Milovich et al [26] using a Drude-Lorentz model, but this is not the main focus of the present study. The dielectric functions of ITO and Au are modeled by a Drude model The effects of temperature and lattice vibration on the dielectric function of ITO are neglected.…”
Section: B Parametrization Of the Near-field Inas Systemsmentioning
confidence: 99%
“…The tandem cell consists of two -on-TPV subcells: an InAs bottom cell and a GaInAsSb top cell. Because an InAs cell has a narrow bandgap and can operate at room temperatures [44,45], we selected it as a bottom cell. For a wider-bandgap top cell, we chose Ga In 1− As Sb 1− quaternary semiconductor of which electrical and optical properties can be tuned according to the and composition ratio.…”
Section: Theoretical Modelingmentioning
confidence: 99%
“…Near-field radiative heat transfer (NFHT) has attracted a lot of attention over the past years for potential applications such as energy conversion, [1][2][3][4][5] active thermal control, [6][7][8][9] or for more fundamental studies on the effect of various material platforms, [10][11][12][13][14] material geometries, 15 or external fields. 16 Near-field thermal radiation consists of evanescent electromagnetic coupling occurring between two bodies at subwavelength distances, greatly increasing the radiative exchange beyond conventional laws of thermal radiation.…”
mentioning
confidence: 99%
“…[39][40][41][42][43] Current experimental platforms all rely on unique, custombuilt systems, on which it is difficult to integrate new materials to experimentally study and confirm existing theoretical work on NFHT. There is consequently a substantial imbalance between a large body of theoretically investigated phenomena, 1,2,[6][7][8][10][11][12]14,15,[18][19][20][21][22][23][24][25]44 and of relatively modest experimental capabilities. Due do their highly custom nature, experimental platforms are typically reported only once in scientific literature and are rarely used again as a systematic tool for studying other NFHT effects.…”
mentioning
confidence: 99%