2019
DOI: 10.1016/j.solmat.2019.01.011
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Design of an intermediate Bragg reflector within triple-junction solar cells for spectrum splitting applications

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Cited by 14 publications
(7 citation statements)
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“…The relevant data above are also listed in Table S1. There is an abnormal reflection peak at 900 nm, which is caused by the AlGaAs/GaAs Bragg reflectors between the middle and bottom-cells [15][16][17][18] . The digital photograph in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…The relevant data above are also listed in Table S1. There is an abnormal reflection peak at 900 nm, which is caused by the AlGaAs/GaAs Bragg reflectors between the middle and bottom-cells [15][16][17][18] . The digital photograph in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…There are also theoretical studies that predict the performance enhancement of silicon-based tandem cells as well as triplejunction solar cells when they are combined with DBRs. [8,47,71] Below we see some more examples.…”
Section: Photovoltaic Devicesmentioning
confidence: 99%
“…Recent advances in materials and coating processes have resulted in solution-based DBRs with a remarkable performance which is on par with traditional physical/chemical vapor phase deposition. This has resulted in many interesting DBR applications namely light emission control, [4][5][6] improving the performance of photovoltaics, [7][8][9][10] colorchanging sensors [11][12][13] and recently in catalysis. [14] While DBRs have attractive properties, it is very important to use them only in relevant applications and be cautious when reporting performance…”
mentioning
confidence: 99%
“…The reflectance of the DBR structure increased with increase of both Al fraction and period number. However, the reflectance peak of the DBR structure was red‐shifted for a high Al fraction 19 . When the Al fraction was 0.8, the DBR structure had a high reflectance and the reflectance peak wavelength was located at 860 nm and the absorption spectrum of the Ge bottom subcell was unaffected.…”
Section: Simulation and Experimentsmentioning
confidence: 99%
“…However, the reflectance peak of the DBR structure was red-shifted for a high Al fraction. 19 When the Al fraction was 0.8, the DBR structure had a high reflectance and the reflectance peak wavelength was located at 860 nm and the absorption spectrum of the Ge bottom subcell was unaffected. Figure 2B shows the change in the reflectance of the DBR structure with an increasing period number of the DBR layers for a fixed Al fraction, that is, GaAs/Al 0.8 Ga 0.2 As DBR.…”
Section: Simulation and Experimentsmentioning
confidence: 99%