Design of an LTCC switch diplexer front-end module for GSM/DCS/PCS applications

Lucero, R.; Qutteneh, W.; Pavio, A.M.; Meyers, D.; Estes, J.

doi:10.1109/rfic.2001.935678

Cited by 42 publications

(10 citation statements)

References 1 publication

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“…The output power stage is operating in dual F mode and uses two 6mm gate width NLDEMOS power transistors with a Ron of 3 Ω.mm, a BVdss of 15 V and a Ft of 25 GHz. The interstage matching network between second and third stages uses bondwire inductances and integrated MOM capacitors, whereas the output matching network, including power combiner, is designed on the [3]. Usually, this function is realized with STMicroelectronics IPAD™ (Integrated Passive and Active Devices) or ceramic LTCC components.…”

Section: Differential Power Amplifiermentioning

confidence: 99%

Efficient BAW Filtering Solution for EDGE Transmitter

Bar

Hibon

Giry

et al. 2006

2006 European Microwave Conference

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This paper presents a bandpass filter for DCS/EDGE transmitter using bulk acoustic wave technology. It is designed to filter PA's harmonic frequencies and out-of-band noise generated by Sigma-Delta modulator in DCS/EDGE architecture. The filter is based on Solidly Mounted Resonators electrically coupled in a ladder type topology; it achieves 2.4 dB insertion loss including matching network to 50 Ω, more than 15 dB of return loss over the 75MHz DCS band. Linearity and power handling capability characterizations are detailed. This filter is combined with a Power Amplifier using STMicroelectronics' 0.25 µm BiCMOS technology, it is a first step to develop a Power Amplifier Module for GSM/EDGE standard in the DCS frequency band.

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Section: Differential Power Amplifiermentioning

confidence: 99%

Efficient BAW Filtering Solution for EDGE Transmitter

Bar

Hibon

Giry

et al. 2006

2006 European Microwave Conference

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“…This evolution in cell phone RF capability has been mirrored by improvements in cost and capability of the individual components. The RF switch found in the front end module's switch has evolved from GaAs PHEMT switches [1] to a more integrated solution with Silicon CMOS on sapphire [2] to a lower cost and high performing Silicon on Insulator solution [3]. The evolution in phone standards has increased the number of RF switch ports from about 6 for the 2G standard to around 30 for today's 4G LTE handsets [4].…”

Section: Introductionmentioning

confidence: 99%

Improvements in SOI technology for RF switches

Jaffe¹,

Abou-Khalil²,

Botula³

et al. 2015

2015 IEEE 15th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as the dominant technology for RF switches in RF front end modules for cell phones and WiFi. RF SOI technologies were created from silicon processes originally used for high speed logic applications, but the technology was modified to meet the performance needs of RF switches. The RF SOI technologies have been improved to follow the evolving system requirements for insertion loss, isolation, voltage tolerance, linearity, integration and cost. In this paper, the performance results of the latest generations of RF SOI switch technologies from IBM are reviewed and technology elements that contribute to improved performance are discussed. Future improvements are also discussed.

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“…Low Temperature Co-Fired Ceramic (LTCC) have also been utilized and in general the cost is relatively high [10]- [12].…”

Section: Introductionmentioning

confidence: 99%

Diplexer with high isolation using multi-order resonances

Wang

Lin

Wang

et al. 2015

2015 Asia-Pacific Microwave Conference (APMC)

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Diplexer with high isolation was proposed in this paper. We analyze the design procedure of diplexer and then add three order resonances in diplexer. 0.25λ transmitting lines at distinguished working center frequency are used to make the isolation between two paths of diplexer better. Test results show that diplexer with two bands at 1.95 GHz and 2.12 GHz is realized. Favorable out-of-band rejection can be seen in measurement, and the isolation between two paths is below -25 dB in the whole band 1.5 GHz to 2.5 GHz.

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Design of an LTCC switch diplexer front-end module for GSM/DCS/PCS applications

Cited by 42 publications

References 1 publication

Efficient BAW Filtering Solution for EDGE Transmitter

Efficient BAW Filtering Solution for EDGE Transmitter

Improvements in SOI technology for RF switches

Diplexer with high isolation using multi-order resonances

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