1990
DOI: 10.1016/0925-4005(90)80210-q
|View full text |Cite
|
Sign up to set email alerts
|

Design of an open-tubular column liquid chromatograph using silicon chip technology

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
170
0
9

Year Published

1998
1998
2015
2015

Publication Types

Select...
9
1

Relationship

0
10

Authors

Journals

citations
Cited by 326 publications
(179 citation statements)
references
References 5 publications
0
170
0
9
Order By: Relevance
“…As silicon has excellent mechanical properties and chemical inertness, it is not surprising that the introduction of micro total analysis systems (m-TAS) started with silicon-based microfluidic chips [60,61]. The steps of standard one-mask microfabrication are shown in Fig.…”
Section: Photolithographymentioning
confidence: 99%
“…As silicon has excellent mechanical properties and chemical inertness, it is not surprising that the introduction of micro total analysis systems (m-TAS) started with silicon-based microfluidic chips [60,61]. The steps of standard one-mask microfabrication are shown in Fig.…”
Section: Photolithographymentioning
confidence: 99%
“…The electric coupling of the high voltage necessary for the electrophoretic separation and the low electric signals used for the electrochemical detection has been a major technological hurdle and has limited the wider development and applications of electrochemical detection. Conductivity detection was one of the main electrochemical detection methods investigated in micro-TAS [9][10][11][12][13][14][15][16][17][18][19]. Both for end-of-column and for in-column conductivity measurements, electric-coupling may cause polarization at the sensing electrodes, bubble generation, or damage to the detection circuit.…”
Section: Introductionmentioning
confidence: 99%
“…The gas precursors used for deep etching of glass are SF 6 72 Additional gases such as He, H 2 , O 2 , or Ar may be added to control chamber pressure or for improving the quality of the etching process. Since the selectivity of the etching process is low, a relatively thick masking layer is required, such as electroplated Ni (20 lm-thick) for SF 6 chemistry, bulk silicon, 71 PECVD amorphous silicon (12 lm-thick), 70 or even a thick layer of SU-8 photoresist. 70 The selectivity of the etching rate (glass/mask) is about 4:1 and 2.5:1 for Si and SU-8 masks, respectively.…”
Section: Dry Etchingmentioning
confidence: 99%