Design of AND and NAND Logic Gate Using NDR-BASED Circuit Suitable for CMOS Process

Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling Multivalued Logic

“…To characterize this effect, the most important parameter is the peak-to-valley ratio (PVR), which is defined by I(V Peak )/I(V Valley ). 17 A large and stable PVR is highly relevant for logic applications. 15,17 As the electron concentration in the Ge channel can be modulated by varying V CG, a tunable PVR is observed.…”

“…17 A large and stable PVR is highly relevant for logic applications. 15,17 As the electron concentration in the Ge channel can be modulated by varying V CG, a tunable PVR is observed. Consequently, starting with V CG = 3 V the PVR increases from 1.2 to 7.7 at V CG = 5 V.…”

“…Consequently, linearly increasing V D while monitoring I D for different V CG between 0 and 5 V, Figure reveals voltage-controlled NDR features with progressive enhancement for higher V CG . To characterize this effect, the most important parameter is the peak-to-valley ratio (PVR), which is defined by I ( V Peak )/ I ( V Valley ) . A large and stable PVR is highly relevant for logic applications. , As the electron concentration in the Ge channel can be modulated by varying V CG, a tunable PVR is observed.…”

“…To characterize this effect, the most important parameter is the peak-to-valley ratio (PVR), which is defined by I ( V Peak )/ I ( V Valley ) . A large and stable PVR is highly relevant for logic applications. , As the electron concentration in the Ge channel can be modulated by varying V CG, a tunable PVR is observed. Consequently, starting with V CG = 3 V the PVR increases from 1.2 to 7.7 at V CG = 5 V. In comparison with Ge quantum dot tunneling diodes and Si and Si/SiGe resonant interband tunneling diodes, , the room-temperature PVR of our best performing RFET devices is approximately a factor 10 larger.…”

“…Recently, an MVL concept based on exploiting the monostable-to-multistable nature of serially connected negative differential resistance (NDR) devices was demonstrated, creating a staircase of holding states . An example for a simple yet innovative logic element taking advantage of the NDR characteristic is the monostable–bistable transition logic element (MOBILE), employing two NDR devices connected in series capable of performing both NAND and NOR operations. , Furthermore, by stacking more than two NDR devices, an efficient and compact signed-digit NDR-based MVL adder combining a more than 5-fold improvement in circuit propagation delay and a 15 times smaller area compared to common CMOS-based circuits has been proposed . Distinct physical methods are currently employed to provide NDR, including resonant tunneling diodes that demand complex semiconductor epitaxial structures, which are difficult to integrate with CMOS .…”