Design of anti-reflection coating for surface textured interdigitated back contact silicon hetero-junction solar cell

Shu, Brent; Das, Ujjwal; Chen, Lei; Zhang, Lulu; Hegedus, Steven; Birkmire, Robert W.

doi:10.1109/pvsc.2012.6318047

Cited by 4 publications

(3 citation statements)

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“…22 After pre-cleaning, the substrates for cell fabrication and minority carrier lifetime (τ eff ) measurements were subjected to anisotropic etching for random texturization using tetra-methyl-ammonium hydroxide. 23 The textured samples were dipped in 10% hydrofluoric acid to remove any native oxide on the surface before loading into the load lock chamber of the d.c.-PECVD system. The a-Si:H films (thickness of 10 nm) were grown on both sides of 1-inch 2 cleaned Si wafers by d.c.-PECVD, having anode-to-cathode distance of 1.76 cm, at a temperature of 200 °C, d.c. plasma current of 60 mA, pressure of 1.75 Torr, and hydrogen (H 2 ) to silane (SiH 4 ) ratio of 3.4.…”

Section: ■ Methodsmentioning

confidence: 99%

“…The samples have undergone standard solvent cleaning along with acidic surface pre-treatment mentioned elsewhere . After pre-cleaning, the substrates for cell fabrication and minority carrier lifetime (τ eff ) measurements were subjected to anisotropic etching for random texturization using tetra-methyl-ammonium hydroxide . The textured samples were dipped in 10% hydrofluoric acid to remove any native oxide on the surface before loading into the load lock chamber of the d.c.-PECVD system.…”

Section: Methodsmentioning

confidence: 99%

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Interface Engineering by Intermediate Hydrogen Plasma Treatment Using Dc-PECVD for Silicon Heterojunction Solar Cells

Soman

Das

Hegedus

2023

ACS Appl. Electron. Mater.

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The high open-circuit voltage (V OC) in silicon heterojunction solar cells is attributed to the superior amorphous–crystalline silicon interface passivation. In this work, we investigated a method called intermediate hydrogen plasma treatment (I-HPT) in which the intrinsic amorphous silicon is exposed to hydrogen plasma in between the deposition using direct current (d.c.) plasma-enhanced chemical vapor deposition. This method can not only enhance the surface passivation but also find industrial application due to its ease of integration in the production line. Fourier transform infrared spectroscopy reveals that I-HPT makes the bulk of the amorphous matrix more disordered. We anticipate that the improvement in passivation comes from the diffusion of hydrogen from the bulk to the interface and shifting of the film closer to the “amorphous-to-microcrystalline” transition regime. Our optimized I-HPT method can obtain an implied V OC of 746 mV without annealing, which corresponds to a low surface recombination velocity of 3.2 cm/s. Therefore, we propose the I-HPT method as an alternative to high-temperature annealing which can reduce a fabrication step and processing time. The I-HPT films characterized by Raman spectroscopy do not show any hydrogen-induced crystallization. We have also demonstrated the proof of concept by applying I-HPT to a silicon heterojunction solar cell which shows ∼15 mV increase in V OC in the device and an absolute increase in efficiency by 0.3% as compared to a cell with no HPT.

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Section: ■ Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Interface Engineering by Intermediate Hydrogen Plasma Treatment Using Dc-PECVD for Silicon Heterojunction Solar Cells

Soman

Das

Hegedus

2023

ACS Appl. Electron. Mater.

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“…换效率的影响；宫臣等 [8] 针对 CdTe 薄膜太阳电池的光谱响应范围，基于 AM1.5 辐照光谱，优化设计了 MgF2/ H4/Al2O3 三层结构增透膜，并使用电子束蒸发技术制备了该增透膜，使得太阳电池量子效率提高 7.3％； Shu 等 [9] 对 α -Si/ α -SiNx/ α -SiC 三层增透膜结构进行优化设计，并将其应用于高效背接触异质结太阳电池上表面，使得最大光电流密度达到 40 mA/cm 2 。虽然关于增透膜设计及制备的文献报道有很多，但是针对不同增透膜对电池光谱响应影响的详细分析…”

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