Design of Ball-Milling Experiments on Bi2Te3 Thermoelectric Material

Kanatzia, A.; Papageorgiou, Ch.; Lioutas, Ch. B.; Kyratsi, Theodora

doi:10.1007/s11664-012-2362-5

Cited by 26 publications

(13 citation statements)

References 25 publications

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“…In other words, when the ball milling time exceeded to 10 h, the average particle sizes had a little fluctuation. It suggests that the powder refinement and agglomeration achieved a balance, and prolonging milling time was no longer able to further refine significantly the powders but can result in different deformation history …”

Section: Resultsmentioning

confidence: 99%

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi₂Te₃‐Based Bulks

Zhang

Fan

et al. 2016

Adv Eng Mater

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The p-type (Bi,Sb) 2 Te 3 bulks are prepared from ball-milling powders by resistance pressure sintering method and their thermoelectric properties are investigated as a function of ball milling time. Prolonging milling time would introduce more anti-site defects, interaction of vacancies and antisite defect, grain-boundaries and interface defects, leading to lower carrier concentration and mobility. The peak value of ZT ¼ 1.0 is achieved at 300 K for the 5 h sample. When the testing temperature is over 323 K, the ZT value of the 0 h sample is higher than that of the 5 h sample. The effect of porosity on the thermoelectric properties is also investigated by effective medium theory. As the porosity increased, the electrical resistivity increases and the thermal conductivity decrease.

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Section: Resultsmentioning

confidence: 99%

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi₂Te₃‐Based Bulks

Zhang

Fan

et al. 2016

Adv Eng Mater

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“…[20] It has been demonstrated that the improvement of ZT in most metal chalcogenides in recent reports is attributable to the introduction of nano-precipitates (or nanograins), which can effectively decrease their thermal conductivity. Although most metal chalcogenide nanostructures could be synthesized via ball milling in large scale, [7][8]11,[13][14][21][22] this process is time-consuming, and the resultant nanostructures have a broad size distribution. Moreover, the product could be contaminated during the milling process.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, the product could be contaminated during the milling process. [21][22] Alternatively, nanostructured metal chalcogenides can be prepared by wet chemical methods. [23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39][40][41] With novel hydrothermal and solvothermal approaches, various metal chalcogenides with a good control of the size, shape distributions, and crystallinity, could be obtained; such as Sb2X3 nanobelts (X=S, Se, Te), [24] dendrite like Cu2-xSe [25] etc.…”

Section: Introductionmentioning

confidence: 99%

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Han

et al. 2015

Nano Energy

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, S. Xue. (2015). Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures. Nano Energy, Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures AbstractA robust low-cost ambient aqueous method for the scalable synthesis of surfactant-free nanostructured metal chalcogenides (MaXb, M=Cu, Ag, Sn, Pb, and Bi; X=S, Se, and Te; a=1 or 2; and b=1 or 3) is developed in this work. The effects of reaction parameters, such as precursor concentration, ratio of precursors, and amount of reducing agent, on the composition, size, and shape of the resultant nanostructures have been comprehensively investigated. This environmentally friendly approach is capable of producing metal chalcogenide nanostructures in a one-pot reaction on a large scale, which were investigated for their thermoelectric properties towards conversion of waste heat into electricity. The results demonstrate that the thermoelectric properties of these metal chalcogenide nanostructures are strongly dependent on the types of metal chalcogenides, and their figure of merits are comparable with previously reported figures for their bulk or nanostructured counterparts.

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“…Therefore, despite the large TE powerfactor, the in‐plane device ZT can be quite low, ≈0.05–0.1. The real challenge remains in taking advantage of the high powerfactor, while reducing the phonon conductivity using novel nanostructuring techniques …”

Section: Transition Metal Dichalchogenides (Tmdcs) and Derivativesmentioning

confidence: 99%

Perspectives on Thermoelectricity in Layered and 2D Materials

Chen

et al. 2018

Adv Elect Materials

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the Seebeck coefficient drops as shown in Figure 1a. [1,2] At the same time, the thermal conductivity from electrons (κ e ) will also increase according to the Wiedemann-Franz law. As a result of these interdependencies, good thermoelectric materials are typically narrow-bandgap semiconductors. This is because wide-bandgap semiconductors are relatively difficult to be highly doped, [3] hence limiting their ability to achieve optimized electrical conductivity for high powerfactor (S 2 σ). They are also typically composed of light elements, which translates to relatively high thermal conductivity. In the other extreme, metals or semi-metals have too large a carrier density or sometimes bipolar carriers, and their density of states (DOS) typically varies slowly at the Fermi level, which results in a low Seebeck coefficient. Additionally, to first order, the Seebeck coefficient typically peaks at S max ∼ E g /2eT max , where E g is the bandgap and T max is the temperature at which S max is located, although more accurate estimates can be made. [4] Therefore, narrow-bandgap semiconductors composed of heavy elements have been the focus in the search for high-performance thermoelectric materials, especially for low-to-intermediate temperature applications.However, layered materials could offer a new platform where relatively high electrical conductivity coexists with high Seebeck coefficient. One of the advantages for layered materials is the quantum size effect. [5] The fact that layered materials are atomically thin layers held together by weak vdW forces indicates that free carriers residing in each layer experience strong quantum confinement, akin to that in 2D. This is especially true for monolayers that can be isolated from the layered materials. As a result, the DOS of these 2D (or quasi-2D) systems significantly deviate from that of a 3D, bulk material, exhibiting strong anisotropy. For example, in the basal plane, sharp rises and peaks could develop in the DOS, different from the smooth DOS in 3D materials. Such rapidly varying DOS (with respect to electron energy E, i.e., high dDOS/dE) is beneficial for thermoelectricity. This is because when the Fermi level (E F ) is tuned to these positions in the DOS, a large asymmetry exists between hot (E > E F ) and cold (E < E F ) electrons, hence more effectively transporting entropy per charge, resulting in a higher Seebeck coefficient without a large sacrifice in the electrical conductivity. Meanwhile, the tunability of the Fermi level of the layered materials can be accessed much more easily than bulk materials by introducing intercalated ions or an electric field effect which assists in optimizing the Seebeck coefficient. [6][7][8][9][10] Another Layered materials have garnered immense interest due to their unique electronic, mechanical, thermal, and optoelectronic properties. In these materials, atomically thin layers are held together by van der Waals (vdW) interactions, allowing single layers to be isolated and studied as 2D materials. New theoretical insights a...

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Design of Ball-Milling Experiments on Bi2Te3 Thermoelectric Material

Cited by 26 publications

References 25 publications

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi₂Te₃‐Based Bulks

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi₂Te₃‐Based Bulks

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Perspectives on Thermoelectricity in Layered and 2D Materials

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Design of Ball-Milling Experiments on Bi2Te3 Thermoelectric Material

Cited by 26 publications

References 25 publications

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi2Te3‐Based Bulks

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi2Te3‐Based Bulks

Robust scalable synthesis of surfactant-free thermoelectric metal chalcogenide nanostructures

Perspectives on Thermoelectricity in Layered and 2D Materials

Contact Info

Product

Resources

About

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi₂Te₃‐Based Bulks

The Effect of Porosity and Milling Induced Defects on the Thermoelectric Properties of p‐Type Bi₂Te₃‐Based Bulks