Design of bias-free operational uni-traveling carrier photodiodes for terahertz wave generation

Liu, Tao; Huang, Yongqing; Niu, Huijuan; Fei, Jiarui; Ma, Xiaokai; Wu, Gang; Li, Kai; Duan, Xiaofeng; Ren, Xiaomin

doi:10.1007/s11082-018-1550-9

Cited by 14 publications

(5 citation statements)

References 23 publications

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“…Therefore, the UTC-PD8 is a benefit structure to achieve high-speed under these conditions. This result is consistent with the previously reported zero-bias operational UTC-PD design, the device with lower doping concentration in the collector can achieve high-speed response [14,15,23,28]. Nevertheless, under zero-bias operation, the bandwidth of the UTC-PD8 is significantly decreasing as the increased photocurrent.…”

Section: Resultssupporting

confidence: 92%

“…We get a modified zero-bias operational UTC-PD (PD1), which has a collector with a uniform doping profile in our previous work [15], and the detailed parameters of the structure is illustrated in table 1. The frequency response (I(ω)) of bias-free operational UTC-PD with large-signal (100% modulation depth) input is calculated by a commercial software of Silvaco Atlas.…”

Section: Utc-pds Under Zero-bias Operationmentioning

confidence: 99%

“…Accordingly, the 3dB bandwidth and RF output-power of photodetector contain some penalty under zero-bias operation. However, for a zero-bias operational UTC-PD, the space-charge screening effect can be restrained to some extent via optimization the doping profile in the absorber, spacer and collector, and the thickness of spacer and collector [15]. In particular, a fixed distribution of background dopants in the collector can be used to repress the effect [16].…”

Section: Introductionmentioning

confidence: 99%

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Optimized uni-traveling carrier photodiode and mushroom-mesa structure for high-power and sub-terahertz bandwidth under zero- and low-bias operation

et al. 2019

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In this paper, physically-based simulations are carried out to investigate and design uni-traveling carrier photodiode (UTC-PD) for high-power sub-terahertz wave generation at zero-and low-bias operation. The reliability of the physically-based simulation is demonstrated by comparing with our experimental result. Both the bandwidth and RF output power of the proposed UTC-PD is significantly improved by careful design the built-in electric field distribution under high-power input. For the optimized UTC-PD with the mesa diameter of 5 μm, its 3dB bandwidth large than 100 GHz even if the photocurrent reaches 6 mA under zero-bias operation. The device can reach a high bandwidth of 92.4 GHz, 105 GHz, and 119.5 GHz under the reverse bias of 0.5 V, 1 V, and 2 V, respectively, even the input photocurrent as high as 18.2 mA. The peak output-power of the device has enhanced at least 7 dB even at 170 GHz and zero-or low-bias operation. Besides, a novel design of mushroom-mesa UTC-PD (MM-UTC-PD) is proposed which with 4.3% improved high-speed performance. The MM-UTC-PD can trade-off between the external quantum-efficiency and bandwidth when miniaturized junction size is required.

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Section: Resultssupporting

confidence: 92%

Section: Utc-pds Under Zero-bias Operationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optimized uni-traveling carrier photodiode and mushroom-mesa structure for high-power and sub-terahertz bandwidth under zero- and low-bias operation

et al. 2019

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“…The junction capacitance under different bias voltage and optical intensity can be calculated by Capacitance-Voltage (C-V) curve simulation. The reliability of this method has been proved in our previous work by comparing the calculation with the corresponding experimental results [27]. The output power of TB-PD exhibits resonance around 400 GHz, thereby enhancing the flatness of its frequency response characteristics.…”

Section: Physical Modelmentioning

confidence: 86%

Research on the resonance of photodiode with a collector for terahertz communication

Tan,

Huang,

Wamh

et al. 2024

Preprint

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In this paper, we find that utilizing the resonance of photodiode with a collector can lead to a flat frequency response within the terahertz frequency range. To enhance the resonant peak output power, we propose a large-sized terahertz band photodiode (TB-PD) features a depleted absorption layer made of 400 nm InGaAs material. Operating under a bias of -4 V and an optical intensity of 1.5e5 W/cm2, the 20-µm-diameter TB-PD exhibits a 3dB flatness in the frequency range of 275 GHz ~ 437 GHz and − 4.6 dBm@340GHz of the output power.

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“…Considering the carrier transit time and junction capacitance, the total 3-dB bandwidth of the MUTC-PDs is shown in figure 6. For the normalized responsivity and RF output power calculation, the parasitic capacitance and series resistance are fixed to be 5 fF and 15 Ω, respectively 8 . As can be seen in figure 6, the 3-dB bandwidth of MUTC-PD2 is larger than MUTC-PD1, especially at 2 V reverse bias voltage.…”

Section: Device Characteristicsmentioning

confidence: 99%

High-speed and high-power modified uni-traveling carrier photodiode with an electric field control layer

Wang

Huang

Juan

et al. 2023

Ninth Symposium on Novel Photoelectronic Detection Technology and Applications

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A modified uni-traveling carrier photodiode (MUTC-PD) with an electric field control layer is proposed. The novel MUTC-PD can achieve high-speed and high-power performance at a lower bias voltage. The insertion of the electric field control layer can change the electric field distribution in the depletion region at a fixed bias voltage. It is beneficial for reducing power consumption, relieving the limitation of heat dissipation on the high-power performance, and suppressing the space-charge effect. In the simulation, the 20-μm-diameter device reaches an RF output power of 23.9 dBm at 20 GHz. Compared with the original structure without the electric field control layer, the junction capacitance of the novel device is decreased from 73.7 fF to 54.7 fF, and the 3-dB bandwidth is increased from 29.5 GHz to 37.5 GHz at a reverse bias of 2 V.

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Design of bias-free operational uni-traveling carrier photodiodes for terahertz wave generation

Cited by 14 publications

References 23 publications

Optimized uni-traveling carrier photodiode and mushroom-mesa structure for high-power and sub-terahertz bandwidth under zero- and low-bias operation

Optimized uni-traveling carrier photodiode and mushroom-mesa structure for high-power and sub-terahertz bandwidth under zero- and low-bias operation

Research on the resonance of photodiode with a collector for terahertz communication

High-speed and high-power modified uni-traveling carrier photodiode with an electric field control layer

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