ICECS'99. Proceedings of ICECS '99. 6th IEEE International Conference on Electronics, Circuits and Systems (Cat. No.99EX357)
DOI: 10.1109/icecs.1999.812210
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Design of bipolar RF ring oscillators

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Cited by 9 publications
(3 citation statements)
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“…Recently, non-linear QOs have exploited techniques using internal capacitances of either MOS [21], [22] or BJTs [23], [24] for high oscillation frequency between 0.9 to 2.5 GHz. However, the ratios of the oscillation frequency (f 0 ) to the unity-gain frequency (f T ) [7] of a transistor are in the region of 0.1 to 0.2 whilst the power consumptions are relatively high between 7.01 to 100 mW.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, non-linear QOs have exploited techniques using internal capacitances of either MOS [21], [22] or BJTs [23], [24] for high oscillation frequency between 0.9 to 2.5 GHz. However, the ratios of the oscillation frequency (f 0 ) to the unity-gain frequency (f T ) [7] of a transistor are in the region of 0.1 to 0.2 whilst the power consumptions are relatively high between 7.01 to 100 mW.…”
Section: Introductionmentioning
confidence: 99%
“…1a). A number of experimental results on the phase noise of static dividers have been reported so far [2,3]. However, no analytical model based on the device parameters, underlying the circuit was provided until now.…”
mentioning
confidence: 99%
“…Research was done into methods of designing them for high speeds, approaching fMAX. Simple bipolar ring oscillator design is discussed in [21]. A quadrature generating ring VCO at f MAX /4 with a single phase at f MAX /2 is described in [22], which uses a reverse-biased junction for control.…”
Section: Vcosmentioning
confidence: 99%