Design of Compact TE-Polarized Mode-Order Converter in Silicon Waveguide With High Refractive Index Material

Zhu, Danfeng; Ye, Han; Li, Jing; Liu, Yumin

doi:10.1109/jphot.2018.2883209

Cited by 15 publications

(13 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, the purity of quasi-TE00 mode, indicated by the red solid line, as another important performance factor for the mode converter, is as high as -0.01 dB (99.77%) at the 1553 nm wavelength, and the degradation of purity is less than 0.041dB over the 100-nm wavelength bandwidth. Compared with the results in previous literature [16]- [20], our proposed mode converter has not only a much compact footprint but also advantages in terms of insertion loss and conversion efficiency. The in-line mode converter between quasi-TE10 and quasi-TE00 modes is fabricated on a silicon-on-insulator (SOI) wafer with a 220 nm top silicon layer on a 2 μm buried silicon-dioxide layer by a single step of electron beam lithography and inductively coupled plasma (ICP) etching.…”

Section: Design and Performance Of Quasi-te00 To Quasi-te10 Mode Convmentioning

confidence: 78%

Ultra-Compact Broadband In-Line Mode Converter Based on a Width-Modulated Silicon Waveguide

Chen

Lin

et al. 2021

IEEE Photonics J.

View full text Add to dashboard Cite

Mode division multiplexing (MDM) technology is becoming increasingly important for modern optical communication systems. Here, an ultra-compact broadband in-line mode converter for quasi-TE00 and quasi-TE10 on the silicon-on-insulator platform is proposed and demonstrated experimentally. In our device, the mode-conversion region consists of a continuously width-modulated waveguide with a footprint size as small as 1.32×4.52 μm 2. Its modulation profile is designed by using the particle swarm optimization algorithm. This device has a simulated conversion efficiency of about-0.174 dB and an insertion loss less than 0.153 dB within 100-nm wavelength bandwidth from 1500 nm to 1600 nm. Our design exhibits a favorable fabrication error tolerance and the fabricated device has achieved nearly the same conversion efficiency as the simulated one. Our concept can also be applied to design other high-performance mode converters, i.e., converting modes between quasi-TE20 and quasi-TE00. Our work suggests a very promising path for realizing compact integrated MDM systems.

show abstract

Section: Design and Performance Of Quasi-te00 To Quasi-te10 Mode Convmentioning

confidence: 78%

Ultra-Compact Broadband In-Line Mode Converter Based on a Width-Modulated Silicon Waveguide

Chen

Lin

et al. 2021

IEEE Photonics J.

View full text Add to dashboard Cite

show abstract

“…High absorption loss, however, is the main disadvantage of these mode converters even for hybrid plasmonic waveguide structures [ 24 , 25 ]. Other high refractive index materials have also been embedded in the silicon waveguide to achieve mode conversion, but high transmission loss and complex fabrication processes remain the obstacles to be overcome [ 26 ]. Most of the reported mode converters to date perform a single mode conversion function only.…”

Section: Introductionmentioning

confidence: 99%

“…Most of the reported mode converters to date perform a single mode conversion function only. They cannot perform two or more mode conversion functions, and are not reconfigurable, extensible, or programmable either [ 15 , 16 , 17 , 18 , 19 , 20 , 21 , 24 , 25 , 26 ]. These functions however are essential for the realization of on-chip multimode photonics.…”

Section: Introductionmentioning

confidence: 99%

On-Chip Reconfigurable and Ultracompact Silicon Waveguide Mode Converters Based on Nonvolatile Optical Phase Change Materials

Fei

Huang

et al. 2022

Nanomaterials

View full text Add to dashboard Cite

Reconfigurable mode converters are essential components in efficient higher-order mode sources for on-chip multimode applications. We propose an on-chip reconfigurable silicon waveguide mode conversion scheme based on the nonvolatile and low-loss optical phase change material antimony triselenide (Sb2Se3). The key mode conversion region is formed by embedding a tapered Sb2Se3 layer into the silicon waveguide along the propagation direction and further cladding with graphene and aluminum oxide layers as the microheater. The proposed device can achieve the TE0-to-TE1 mode conversion and reconfigurable conversion (no mode conversion) depending on the phase state of embedded Sb2Se3 layer, whereas such function could not be realized according to previous reports. The proposed device length is only 2.3 μm with conversion efficiency (CE) = 97.5%, insertion loss (IL) = 0.2 dB, and mode crosstalk (CT) = −20.5 dB. Furthermore, the proposed device scheme can be extended to achieve other reconfigurable higher-order mode conversions. We believe the proposed reconfigurable mode conversion scheme and related devices could serve as the fundamental building blocks to provide higher-order mode sources for on-chip multimode photonics.

show abstract

“…Especially, the hybrid plasmonic waveguide (HPW) with an asymmetric structure has been designed to realize the mode conversion [12]- [14]. (2) Conversion between the fundamental transverse mode and the high-order transverse mode with the same polarization (such as TE 0 -to-TE 1 , TE 0 -to-TE 2 ) [15]- [17]. This conversion is also called the mode-order conversion.…”

Section: Introductionmentioning

confidence: 99%

Broadband and High Extinction Ratio Mode Converter Using the Tapered Hybrid Plasmonic Waveguide

et al. 2019

View full text Add to dashboard Cite

We propose and numerically analyze a broadband and high extinction ratio mode converter to achieve the mode conversion between the fundamental transverse electric mode (TE 0) and the first-order transverse magnetic mode (TM 1). The mode converter is achieved by using the tapered hybrid plasmonic waveguide which the metal is directly covered on the Si waveguide without a thin low-index layer. After optimizing the structure of the tapered hybrid plasmonic waveguide, a wide operation bandwidth of 100 nm is obtained with the extinction ratio of the TM 1 mode and TE 0 mode larger than 20 dB in the output Si waveguide for the forward propagation. And for the back propagation, the operation bandwidth over 65 nm is obtained with the extinction ratio larger than 20 dB in the output Si waveguide. The whole footprint of the mode converter is only 0.8 × 11 μm 2. Fabrication tolerance analysis is also demonstrated.

show abstract

Design of Compact TE-Polarized Mode-Order Converter in Silicon Waveguide With High Refractive Index Material

Cited by 15 publications

References 40 publications

Ultra-Compact Broadband In-Line Mode Converter Based on a Width-Modulated Silicon Waveguide

Ultra-Compact Broadband In-Line Mode Converter Based on a Width-Modulated Silicon Waveguide

On-Chip Reconfigurable and Ultracompact Silicon Waveguide Mode Converters Based on Nonvolatile Optical Phase Change Materials

Broadband and High Extinction Ratio Mode Converter Using the Tapered Hybrid Plasmonic Waveguide

Contact Info

Product

Resources

About