Design of dual‐outputs‐single‐stage a‐Si:H TFT gate driver for high resolution TFT‐LCD application

Zheng, Guang Ting; Liu, Po–Tsun; Wu, Mengyuan

doi:10.1002/jsid.433

Cited by 3 publications

(6 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure A and B show the structure and simulated output of the previous work in low temperature environment (−40°C). By modifying the size of the circuit as shown in Table , same performance could be reach compared with the proposed driver.…”

Section: Resultsmentioning

confidence: 99%

“…By the setting of SR controller, loading of output compared with the study of Zheng, Liu, and Wu could be reduced since the driving system does not need to start up in the next stage.…”

Section: Operation Of the Proposed Integrated Gate Drivermentioning

confidence: 99%

“…One method of a previous research could reduce the pull‐down TFT with single path for pulling up and down in the working period, but the reduced area is limited since a driving block of gate driver has to go with one corresponding noise‐free block per stage. The other way to solve the problem is sharing the noise block for multioutputs by sharing the noise‐free block as shown in Figure …”

Section: Introductionmentioning

confidence: 99%

“…The other way to solve the problem is sharing the noise block for multioutputs by sharing the noise-free block as shown in Figure 1. 20 Although the method could scale down the layout area, charging for gate line and next precharging TFT increases the output loading, which goes against highresolution TFT-LCD displays since it could lower the responding time.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

2018

View full text Add to dashboard Cite

A hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) gate driver with multioutputs (eight outputs per stage) for high reliability, 10.7‐inch automotive display has been proposed. The driver circuit is composed of one SR controller, eight driving TFTs (one stage to eight outputs) with bridging TFTs. The SR controller, which starts up the driving TFTs, could also prevent the noise of gate line for nonworking period. The bridging TFT, using width decreasing which connects between the SR controller and the driving TFT, could produce the floating state which is beneficial to couple the gate voltage, improves the driving ability of output, and reaches consistent rising time in high temperature and low temperature environment. Moreover, 8‐phase clocks with 75% overlapping and dual‐side driving scheme are also used in the circuit design to ensure enough charging time and reduce the loading of each gate line. According to lifetime test results, the proposed gate driver of 720 stages pass the extreme temperature range test (90°C and −40°C) for simulation, and operates stably over 800 hours at 90°C for measurement. Besides, this design is successfully demonstrated in a 10.7‐inch full HD (1080 × RGB×1920) TFT‐liquid‐crystal display (LCD) panel.

show abstract

Section: Resultsmentioning

confidence: 99%

“…By the setting of SR controller, loading of output compared with the study of Zheng, Liu, and Wu could be reduced since the driving system does not need to start up in the next stage.…”

Section: Operation Of the Proposed Integrated Gate Drivermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

2018

View full text Add to dashboard Cite

show abstract

“…Typically, two capacitors are employed in a single‐stage gate driver for small‐size display panels. One capacitor is used for voltage bootstrapping, while the other for voltage coupling for low‐level maintaining 12–16 . The proposed gate driver in this paper demonstrates additional function of the coupling capacitor, that is, charge storage during the touch detection phase.…”

Section: Introductionmentioning

confidence: 99%

A compact gate driver with bifunctional capacitor for in‐cell touch mobile display

et al. 2021

View full text Add to dashboard Cite

A thin‐film transistors (TFTs) integrated gate driver circuit with bifunctional capacitors for in‐cell touch with horizontal blanking display mode is proposed in this paper. The coupling capacitor, which conventionally enables low‐level‐maintaining parts in display periods, is reused to store transfer charges during touch detection periods. Consequently, only nine TFTs and two capacitors are used for a single stage of the proposed gate driver for in‐cell touch display. Furthermore, the bifunctional capacitor scheme not only avoids the driving TFT from long‐time voltage stress but also suppresses the transfer charges leakage effectively. Therefore, the variation ratios of rising/falling time between adjacent gate driver stages are suppressed within 6%. For a 5.7‐in. display with HD+ resolution, the layout of a single gate driver stage is 623 μm (width) × 171 μm (height). The proposed gate driver circuit has been prepared with the state‐of‐the‐art hydrogenated amorphous silicon (a‐Si:H) TFT manufacturing process. The measured results verified the circuit functions. The gate driver output waveforms are well maintained and being almost independent of touch detection time interval from 100 to 300 μs.

show abstract

A-Si TFT Integrated Gate Driver Workable at −40°C Using Bootstrapped Carry Signal

et al. 2022

View full text Add to dashboard Cite

A thin-film transistors (TFTs) integrated gate driver which can work well at low temperature down to -40 • C is proposed and demonstrated. The carry signal (CN) of the driver, being generated through the voltage bootstrapping approach using a CN-connected capacitor, is used to pre-charge the following stage of the driver. As the rising and falling time of CN is much shorter than that of the gate driving signal GN, the bootstrapping voltage is increased and voltage loss of the pre-charge transistor can be much reduced, to avoid the driver's malfunction at low temperature. This structure further benefits maintaining the driving speed over long operation time at high temperature. On the other hand, the GN, instead of CN, is used to reset the gate driver to suppress the voltage feed-through effects. One single stage of the driver consists of 11 TFTs and 2 capacitors, driven by 4 clock signals with the duty ratio of 25%. An a-Si:H TFTs implemented single stage circuit of the driver occupies an area of 250 μm×1099 μm. Measurements show that the output voltage magnitude can be maintained well when temperature varies from -40 • C to 80 • C. Moreover, the rising-time and falling-time increase of the output pulse are both less than 3 μs after 240 hours of the accelerated high temperature aging operations.INDEX TERMS a-Si TFT; gate driver circuit; reliability; low temperature

show abstract

Design of dual‐outputs‐single‐stage a‐Si:H TFT gate driver for high resolution TFT‐LCD application

Cited by 3 publications

References 12 publications

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

Multioutputs single‐stage gate driver on array with wide temperature operable thin‐film‐transistor liquid‐crystal display for high resolution application

A compact gate driver with bifunctional capacitor for in‐cell touch mobile display

A-Si TFT Integrated Gate Driver Workable at −40°C Using Bootstrapped Carry Signal

Contact Info

Product

Resources

About