Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI

Gao, Li; Wagner, Eric; Rebeiz, Gabriel M.

doi:10.1109/tmtt.2019.2944820

Cited by 75 publications

(27 citation statements)

References 26 publications

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“…Among the many electronic devices, the high electron mobility transistor (HEMT) device is attracting attention as a key alternative component in the development of W-band MMIC devices, due to its low noise and excellent ultra-high-frequency characteristics. Recently, the frequency characteristics of complementary metal-oxide semiconductor (CMOS) devices have continuously improved, and several MMIC results using CMOS technology operating in W-band have been published [5][6][7][8][9]. MMIC using CMOS has the advantages of low price and high integration, as compared to competitive semiconductor technologies.…”

Section: Introductionmentioning

confidence: 99%

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

et al. 2020

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We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz.

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Section: Introductionmentioning

confidence: 99%

W‐Band MMIC chipset in 0.1‐μm mHEMT technology

et al. 2020

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“…The employed metal stack has nine copper levels labeled from the bottom to the top M 1,2 , C 1-5 , J A , O I , plus an additional top aluminum layer L B [2], [6]. A thin buried oxide layer isolates the fully-depleted transistors from the low-resistivity substrate, decreasing the capacitive parasitics [2], [4]. One of the key features of the 22-FDX is its f max of 371 GHz and 299 GHz, and its f t of 347 GHz and 242 GHz of the super-low-threshold-voltage nMOS and pMOS transistors, respectively [2].…”

Section: Mm-wave Ic Technology and Passive Componentsmentioning

confidence: 99%

“…The ground plane was realized within C 1 , and slotting was used to reduce the line losses [20]. Finally, the cross-section dimensions were optimized to have a characteristic impedance Z 0 close to 50 Ω and to fulfill the process metal density rules without metal fillers, avoiding the consequent Q-factor reduction as in [4]. Figure 2(a) shows the cross-section of the transmission lines.…”

Section: Mm-wave Ic Technology and Passive Componentsmentioning

confidence: 99%

“…The 22-FDX Product-Development-Kit (PDK) provides alternate-polarity metal-finger capacitors apmom superior in terms of Q-factor (15% better) and area (one fourth) than custom-made metal-oxide-metal multi-plate capacitors [4], [21]. Finally, the PDK inductors are suited for RF and millimeter-wave designs.…”

Section: Mm-wave Ic Technology and Passive Componentsmentioning

confidence: 99%

“…Furthermore, the latest FD-SOI technologies provide strain-engineered pMOS with performance comparable to those of the nMOS transistors [2], [3]. Recently, millimeter-wave circuits have been realized in FD-SOI CMOS processes, such as power amplifiers [3], low-noise amplifiers [4], broadband amplifiers [5], down-conversion mixers [6], phase shifters [7].…”

Section: Introductionmentioning

confidence: 99%

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A Complementary Ring Mixer Driven by a Single-Ended LO in 22-nm FD-SOI CMOS for K and Ka-Bands

Testa

Szilágyi

Carta

et al. 2021

IEEE Open J. Circuits Syst.

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This paper presents a double-balanced up-conversion ring mixer based on complementary switches operating at millimeter-wave frequencies. Complementary-switching relieves the mixer from the need for a differential Local-Oscillator (LO) signal, simplifying the design and improving the circuit performance. A prototype, capable of operation between 18 GHz and 32 GHz, is implemented in a 22 nm FD-SOI CMOS technology offering n-and p-type transistors with comparable performance. Furthermore, the presented circuit also exploits the back-gate control voltage offered by the process to minimize the transistors threshold voltage, reducing the minimum LO power required to saturate the mixer gain. Measurements showed a conversion gain of -5.5 dB, an output power at 1 dB gain compression (o1dBCp) of -7 dBm, and a Radio-Frequency (RF) bandwidth of 10 GHz. These results were demonstrated for an LO power of 3 dBm at 23.5 GHz or 28 GHz, a DC power of 2.2 mW, and all the mixer ports matched to 50 Ω. The active area of the chip is 0.11 mm 2 , the smallest so far demonstrated for ring mixers. These performances translate in the best-reported figure of merit, which relates gain, RF up-converted power, and required DC and LO power.

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