Design of effective self-powered SnS2/halide perovskite photo-detection system based on triboelectric nanogenerator by regarding circuit impedance

Abstract

Self-powered detectors based on triboelectric nanogenerators (TENG) have been considered because of their capability to convert ambient mechanical energy to electrical out-put signal, instead of conventional usage of electrochemical batteries as power sources. In this regard, the self-powered photodetectors have been designed through totally two lay out called passive and active circuit. in former model, impedance matching between the TENG and the resistance of the circuit’s elements is crucial, which is not investigated systematically till now. In this paper, a cost effective novel planar photodetector (PD) based on heterojunction of SnS2 sheets and Cs0.05(FA0.83 MA0.17)0.95Pb(I0.83Br0.17)3 three cationic lead iodide based perovskite (PVK) layer fabricated which powered by graphene oxide (GO) paper and Kapton based contact-separated TENG (CS-TENG). To achieve the high performance of this device, the proper range of the load resistances in the circuit regards to TENG’s characterization has been studied. In the next steps, the integrated self-powered photo-detection system was designed by applying Kapton/FTO and hand/FTO TENG, separately, in the proposed impedance matching circuit. The calculated D* of integrated self-powered SnS2/PVK supplied by tapping the Kapton and hand on FTO is 2.83 × 1010 and 1.10 × 1013 Jones under the 10 mW/cm2 of white light intensity, the investigations determine that for designing significate performance of self-powered PD supplied by TENG, the existence of the load resistance with the well match amount to the utilized TENG is crucial. Our results which can be generalized to other types of passive self-powered sensors, are substantial to both academia and industry concepts.

Enhanced Broadband Photoresponsivity of the CZTS/WSe2 Heterojunction by Gate Voltage

“…One of the most efficient routes to surpass these issues is the fabrication of the heterostructure form of WSe 2 with other high absorption coefficient materials, in order to improve the generation and separation of photocarriers. , Although many studies have been performed in this field, such as MoS 2 /WSe 2 , GaAs/WSe 2 , and SnS 2 /halide perovskite, efforts are still going on to introduce a new combination of materials with desired and favorable band alignment for their futuristic optoelectronic applications. Recently, earth-abundant Cu 2 ZnSnS 4 (CZTS), which is a p-type semiconductor with a band gap of 1.4–1.5 eV and a high absorption coefficient of 104 cm –1 , has received increasing attention due to its special performances in optoelectronics and solar cells …”

“…Despite all of these enticing aspects, a few-layer sample of the WSe 2 -based photodetectors suffers from some negative features, including low absorption of light (0.02% in maximum value),17 an absence of essential charge carriers (∼10 12 cm −2 ),18 and a narrow detection range in wavelength19 along with a slow photoresponse.One of the most efficient routes to surpass these issues is the fabrication of the heterostructure form of WSe 2 with other high absorption coefficient materials, in order to improve the generation and separation of photocarriers 20,21. Although many studies have been performed in this field, such as MoS 2 / WSe 2 , 22 GaAs/WSe 2 ,23 and SnS 2 /halide perovskite,24 efforts are still going on to introduce a new combination of materials with desired and favorable band alignment for their futuristic…”

Vertically oriented SnS2 on MoS2 nanosheets for high-photoresponsivity and fast-response self-powered photoelectrochemical photodetectors

“…These results suggest HV-SnS 2 /MoS 2 has a superior response speed compared with BP 2 , Te@Bi, 44 SnS, 49 BP/MoS 2 , 45 SnS 2 (FET), 54 and SnS 2 /MoS 2 (FET) 52 based photodetectors. Meanwhile, compared with voltage-driven photodetectors based on MoS 2 and SnS 2 heterostructures, 34,48,[50][51][52][53]55,56 the HV-SnS 2 /MoS 2 self-powered photodetector shows a fast response time but relatively lower photocurrent density and responsivity. To improve the photodetection capability of HV-SnS 2 /MoS 2 , applying an external bias may be an efficient way to accelerate the charge transport process.…”

Self-Powered Humidity Sensors Based on SnS2 Nanosheets

“…To provide the self-powered sensors, the TENG has been coupled with it in the passive circuit; the matching of the sensor's resistance and impedance of the TENG is not trivial and if they are not matched with each other properly, the sensing signal cannot be visible obviously. 34 In this research, the self-powered SnS 2 -based humidity sensor coupled with CS FTO/ Kapton TENG at a wide RH range has been investigated. The fast response/recovery time about 4 and 7 s, respectively, with the long-time stability has been observed.…”

“…Therefore, to access a large scalable and facile humidity sensor based on SnS 2 nanosheets, the laser engraved FTO/glass has been applied to desert the complex and expensive methods such as lithography and metal deposition for electronic device preparation. To provide the self-powered sensors, the TENG has been coupled with it in the passive circuit; the matching of the sensor’s resistance and impedance of the TENG is not trivial and if they are not matched with each other properly, the sensing signal cannot be visible obviously …”