Design of Extended Channel Ge-source TFET for Low Power Applications

Abstract

In this paper, a novel design of a TFET structure using Ge-source and extending a part of the channel into the source is proposed. The DC performance is analyzed by evaluating the ON current, ION/IOFF ratio and subthreshold swing (SS). Moreover, the high-frequency performance is inspected in terms of transconductance (gm) and unit-gain cutoff frequency (fT). All simulations are performed utilizing 2D SILVACO TCAD. It is demonstrated that the ON current and the cutoff frequency can be simultaneously improved by appropriate design of the proposed structure.