Design of free patterns of nanocrystals with ad hoc features via templated dewetting

Aouassa, Mansour; Berbézier, Isabelle; Favre, Luc; Ronda, A.; Bollani, Monica; Sordan, Roman; Delobbe, Anne; Sudraud, P.

doi:10.1063/1.4730620

Cited by 35 publications

(35 citation statements)

References 51 publications

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“…It is well known that thin films are not stable and tend to break up into isolated particles (or droplets in the liquid state), where the dewetting process is driven by minimization of the total surface/interface/ grain boundary energy. Dewetting is commonly used for microelectronic applications to form nanometer length-scale crystals for silicon-on-insulator structures [1,2], catalysts for growth of carbon nanofibers and nanotubes [3], and electrical memory and optical devices [4,5].…”

Section: Introductionmentioning

confidence: 99%

The role of abnormal grain growth on solid-state dewetting kinetics

et al. 2014

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Continuous thin films of Pt on A-plane 1 1 2 0 À Á sapphire substrates were dewetted to characterize the morphological evolution and dewetting kinetics at 800°C using an oxygen partial pressure of 10 À20 atm. Hole growth was studied, focusing on partially dewetted samples. Four different low-index orientation relationships were found between the Pt and sapphire substrate by electron backscattered diffraction combined with transmission electron diffraction patterns. Abnormal grains adjacent to the holes with a small deviation from one of the low-index orientation relationships were observed. The difference in the heights of the abnormal grains adjacent to the holes (rim-height) is influenced by the initial position of the hole, and the existence of grains with a low-energy interface orientation relationship, and not only by diffusivity rates dictated by surface orientation as described in existing edge-retraction models. The existence of low-index orientation relationships is seen as the driving force for abnormal grain growth in the vicinity of the holes, and is a dominant factor in controlling the dewetting rate of thin metal films on oxide surfaces.

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Section: Introductionmentioning

confidence: 99%

The role of abnormal grain growth on solid-state dewetting kinetics

et al. 2014

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“…In fact, one of the main limits of this method is the relatively low density of the dewetted particles: in solid state dewetting, as in other selfassembly methods for 3D nanostructures (e.g. Stranski Krastanov growth in IV-IV and III-V compounds) a linear dependence links the initial thickness of the Si(Ge) layer and the final size (and density) of the dewetted islands 59 . This feature naturally leads to large inter-particle distances and limits the exploitation of dewetting for nanophotonics.…”

Section: Introductionmentioning

confidence: 99%

Self-assembled antireflection coatings for light trapping based on SiGe random metasurfaces

Bouabdellaoui

Checcucci

Wood

et al. 2018

Phys. Rev. Materials

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We demonstrate a simple self-assembly method based on solid state dewetting of ultra-thin silicon films and germanium deposition for the fabrication of efficient anti reflection coatings on silicon for light trapping. Via solid state dewetting of ultra-thin silicon on insulator and epitaxial deposition of Ge we fabricate SiGe islands with a high surface density, randomly positioned and broadly varied in size. This allows to reduce the reflectance to low values in a broad spectral range (from 500 nm to 2500 nm) and a broad angle (up to 55 degrees) and to trap within the wafer a large portion of the impinging light (∼40%) also below the band-gap, where the Si substrate is non-absorbing. Theoretical simulations agree with the experimental results showing that the efficient light coupling into the substrate mediated by Mie resonances formed within the SiGe islands. This lithography-free method can be implemented on arbitrarily thick or thin SiO2 layers and its duration only depends on the sample thickness and on the annealing temperature.

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“…In the first part, we will describe the KMC model and then we will compare simulated results to SOI (silicon-on-insulator) experimental dewetting patterns for various shapes as rings, crosses, and wires widely used in the literature. [5][6][7][8][9][10] Moreover, comparisons between KMC simulations and dewetting experiments enable us to show that the prevailing dewetting mechanism depends on the pattern width.…”

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confidence: 96%

“…4 It has been shown recently that the use of patterned films may provide a route to obtain specific arrangements of 3D islands. [5][6][7][8][9][10] More precisely, by means of well-chosen parameters, the patterns can be designed to create nanostructured surface areas with high precision. Since these first proof-of-concepts, many authors have used lithography to form various patterns to obtain the dewetted structures of choice of interest.…”

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confidence: 99%