2022
DOI: 10.1007/s11235-021-00869-9
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Design of high gain high output matched narrow band LNA using induced degeneration topology for receiver applications

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Cited by 2 publications
(2 citation statements)
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“…To create a resistive impedance at the input interface of the LNA, an inductance element is introduced between the source of M 0 and the ground. This approach makes use of the high-quality factor of L 1 and has been widely utilized in narrowband LNAs [2]. It can also enhance wideband LNAs in achieving impedance matching and optimized NF over target operation bands.…”
Section: Design Methodologymentioning
confidence: 99%
See 1 more Smart Citation
“…To create a resistive impedance at the input interface of the LNA, an inductance element is introduced between the source of M 0 and the ground. This approach makes use of the high-quality factor of L 1 and has been widely utilized in narrowband LNAs [2]. It can also enhance wideband LNAs in achieving impedance matching and optimized NF over target operation bands.…”
Section: Design Methodologymentioning
confidence: 99%
“…However, the challenge persists in ensuring consistent impedance matching throughout this wide frequency span. Conventional wireless receivers often rely on the inductor degenerated LNA, which possesses desirable attributes [1][2][3], but within a narrow frequency band centred around a single frequency [4,5]. Alternatively, distributed amplifiers (DAs) [6][7][8][9][10][11] offer enhanced impedance matching and high gain across a broader frequency range, albeit necessitating multiple inductors.…”
Section: Introductionmentioning
confidence: 99%