2020
DOI: 10.11648/j.ijecec.20200601.11
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Design of High-Performance 1-Bit Full Adder Cells Based on MOS-Type GNRFETs

Abstract: In deep sub-micron technologies, conventional silicon-based transistors are faced main several problems related to the short-channel effects such as power dissipation, subthreshold leakage, and drain-induced barrier lowering (DIBL). Graphene nano-ribbon field-effect transistors (GNRFETs) have become a potential contender as a substitute for traditional silicon-based transistors in next generation nano-electronic devices. They exhibit fantastic properties such as high charge carrier mobility, mean free path of … Show more

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