Design of High-performance Wilkinson Power Divider on SI-GaAs Substrate using Integrated Passive Technology

Abstract

An integrated passive device technology by semi-insulating (SI)-GaAs-based fabrication has been developed to meet the ever-increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, high Q spiral inductor due to thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost using only six process layers. This paper presents the Wilkinson power divider with excellent performance for a digital cellular system application. The insertion loss of this power divider is -0.53 dB and the port isolation greater than -30 dB over the entire band. Return loss in input and output ports are -20.2 dB and -35.8 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within a die size of 1.42 mm 2 .

An on‐wafer embedded passive device using chip‐in‐substrate packaging technology

“…Competitive mobile products trending toward small size, low cost, multifunctionality, and short development time that also support wireless technologies are constantly being introduced to the market . The operating frequency of these products is within the gigahertz range, as this range is robust to noise, provides fast data communications and consumes low power . Many studies of system packaging technology have aimed to satisfy the parasitic factor of circuits caused by high frequencies .…”