The
prediction of growth rates as functions of process conditions
can reduce experimental efforts to develop crystallization processes.
There is a lack of reliable models of static layer melt crystallization
in the literature. In this study, a model for the prediction of growth
rates for static layer melt crystallization was developed. The essence
of this model is the description of heat transport during crystal
growth in a naturally convected static melt where, in contrast to
other models, the implicit relation between the growth rate and the
natural convection is considered. Predicting crystal growth rates
requires knowledge of the crystal thermal conductivity, a sensitive
physical property that is often estimated or fit to experimental data.
In this study, an approach for measuring the crystal thermal conductivity
was developed and successfully validated with literature data. The
crystal thermal conductivities of p-xylene, n-hexadecane, n-dodecanal, and n-tridecanal were measured. With the use of these measurements,
the crystal growth rates of the binary systems n-dodecanal/iso-dodecanal, n-tridecanal/iso-tridecanal, and p-xylene/m-xylene
from static layer crystallization were predicted as functions of the
process conditions. Good agreement with experimental data was achieved
without the use of a fitted parameter.