“…High-voltage Lateral Diffused Metal Oxide Semiconductor Transistor (LDMOS) is very suitable for the applications of Smart Power Integrated Circuit [1,2,3,4,5,6,7,8]. Usually, p-channel LDMOS (pLDMOS) is very attractive in the full complementary high-voltage driver ICs [9,10,11,12,13,14]. However, due to low mobility of hole, the specific on-resistance (R on,sp ) is about 2-3 times larger than that of the n-channel LDMOS (nLDMOS).…”