Design of integrated current sensor for lateral IGBT power devices

Liang, Yung C.; Samudra, Ganesh S.; Hor, V.

doi:10.1109/16.701496

Cited by 9 publications

(2 citation statements)

References 6 publications

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“…It is needed to sense the output current in power converter in order to realize control and protection functions. Based on the similar concept used in IGBT current sensing , here we add the sense electrode in normally‐OFF MIS‐HEMTs. As shown in Fig.…”

Section: Mis‐hemt Device Modelmentioning

confidence: 99%

Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion

Sun

Liang

Yeo

et al. 2016

Physica Status Solidi (a)

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In order to examine the feasibility of full wide‐bandgap GaN‐based converters in aerospace power conversion applications, this paper proposes a monolithic DC–DC buck converter design with integrated high‐side gate driver, over‐current protection, and pulse‐width‐modulation feedback control circuits based on full AlGaN/GaN MIS‐HEMT configuration. After model calibration of the DC and transient behaviors with fabricated normally‐ON and normally‐OFF AlGaN/GaN MIS‐HEMT devices, the DC–DC buck converter is simulated. The circuit converts the input 100 V down to an adjustable range at 1 MHz switching frequency. The over‐current protection function can properly protect the converter at a preset over‐current threshold. The converter can respond to the load current and line input voltage fluctuations due to the integrated feedback control. These results illustrate the performance of proposed all‐GaN DC–DC power converter design.

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Section: Mis‐hemt Device Modelmentioning

confidence: 99%

Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion

Sun

Liang

Yeo

et al. 2016

Physica Status Solidi (a)

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“…Each matrix element represents the amount of signal voltage from each detector that results from one ampere of current in each conductor. The measured cross-coupling matrix that relates the two currents to the five field detectors is given in (2). Since there are two currents being measured, the minimum number of detectors needed to decouple the currents is two.…”

Section: Disturbance Field Decouplingmentioning

confidence: 99%

Effective Use of Miniature, Multi-Point, Field-Based Current Sensors without Magnetic Cores

Olson¹

2007

2007 IEEE Industry Applications Annual Meeting

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A methodology for decoupling cross-coupled fields in compact, integrated current sensor arrays is presented. The compactness of the current sensor array elements is made possible by using highly sensitive field detectors based upon Giant Magnetoresistive (GMR) technology, which offers galvanic isolation, small size (~mm 2 ) and high bandwidth (>1 MHz). By using known geometric relations between the conductor geometries and locations of the field detectors, cross-coupled magnetic field signals can be used to extract necessary current signals, as well as separate unknown disturbance fields. This methodology can also be used to simplify the magnetic biasing requirements of GMR field detectors, including decoupling of the temperature dependence of the biasing magnet. Moreover, the methodology also can be extended to estimate the temperature of the magnet to provide an extra temperature signal for thermal management algorithms.

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Power metal oxide semiconductor field effect transistors with accurate current sensing function over a wide temperature range

Takaya

Miyagi

Hamada

2011

IET Power Electron.

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Design of integrated current sensor for lateral IGBT power devices

Cited by 9 publications

References 6 publications

Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion

Design of power integrated circuits in full AlGaN/GaN MIS‐HEMT configuration for power conversion

Effective Use of Miniature, Multi-Point, Field-Based Current Sensors without Magnetic Cores

Power metal oxide semiconductor field effect transistors with accurate current sensing function over a wide temperature range

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