Design of integrated millimetre wave microstrip interdigital bandpass filters on CMOS technology

Abstract

With communication systems designed for operation in the millimeter wave frequencies it is now possible to have most of the transceiver implemented on a single CMOS die. An important system component that is required to ensure regulatory compliance is the RF bandpass filter. Unfortunately to date RF bandpass filters have been difficult to integrate on CMOS because of filter size and undesirable performance due to the conductive substrate. In this paper a six step method for the design of integrated interdigital bandpass filters on CMOS is presented. The utility of the method outlined in the paper is demonstrated for an on-chip integrated mm-wave interdigital bandpass filter designed and fabricated on 0.13um bulk CMOS. The fabricated filter has a centre frequency of 55GHz and exhibits an insertion loss of -4.5 dB and a return loss of better than -13 dB. This band pass filter demonstrates the feasibility of building integrated RF transmit receive bandpass filters for the front-end of wireless systems operating in the millimeter wave band on bulk CMOS.

Miniature 1.87‐dB insertion‐loss V‐band CMOS bandpass filter with two enhanced finite transmission zeros

“…As can be seen, the proposed filter has small layout area and achieved good S 11 and S 22 performances. Besides, the insertion loss (1/S 21 ) of our filter (1.87 dB at 66.5 GHz) is better than those (2.7-4.9 dB) of the CMOS filters in [12][13][14], that (6.4 dB at 77.3 GHz) of the SiGe filter in [15], and that [3.4 dB (@40 GHz)] of the filter on insulated silicon substrate (achieved by proton implantation) and that [10 dB (@40 GHz)] of the filter on normal silicon substrate with an additional 1.5-lm-thick oxide isolation layer in [16]. The excellent performances of the proposed filter suggest that it is very suitable for V-band communication system applications.…”

“…This indicates that the proposed filter architecture in conjunction with the developed layout skills is suitable for realizing high-performance V-band CMOS filters. Table 2 is a summary of the implemented V-band CMOS filters, and the recently reported state-of-the-art filters on silicon in [12][13][14][15][16]. As can be seen, the proposed filter has small layout area and achieved good S 11 and S 22 performances.…”

“…But the large output capacitance of LDMOS transistor limits its use for higher switching frequencies [10]. Many design examples of class-E PA using LDMOS transistor are reported in [11][12][13][14]. Nevertheless, there is still lack of an equivalent circuit model of LDMOS transistor in class-E PA operation analysis.…”

Design and implementation of a 2.8‐dB insertion loss v‐band bandpass filter in 0.13‐μm cmos technology

“…Table 1 is a summary of the implemented V‐band CMOS filter, and recently reported state‐of‐the‐art filters on silicon in Refs. 9–13. As can be seen, the proposed filter occupies small chip area and achieves good S 11 and S 22 performances.…”

A 60-GHz transceiver on CMOS

“…When integrating the filter onto the 60-GHz transmitter, the high-impedance shielding technique presented in [9] is applied. This reduces the loss due to unwanted signal leakage to the silicon substrate through grid ground plane and also reduces the interference between components due to the unwanted coupling through the conductive substrate.…”