Design of inverse Class‐F power amplifier based on dual transmission line with 87.4% drain efficiency

Zhang, Bo; Chen, Yu; Gao, Jinchun; Wu, Yongle; Liu, Yuanan

doi:10.1002/mop.30859

Cited by 6 publications

(8 citation statements)

References 10 publications

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“…Similarly, from Eq.s ( 11) and ( 12) the second and third harmonic impedances at the extrinsic drain are Z L2 = j64 Ω and Z L3 = -j11 Ω respectively. Several types of loading networks have been documented in the literature [14][15][16][17][18]. In this design, the proposed topology of the load network is presented in Figure 12.…”

Section: Design Of the Matching Networkmentioning

confidence: 99%

An Analytic Design Approach to Inverse Class-F RF Power Amplifiers

Ali

Al-Muifraje

Saeed

2020

ETJ

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The design of high efficiency inverse class-F (class-F-1) radio frequency (RF) power amplifiers includes extensive measurements to characterize the RF power device by means of the empirical load-pull test setup. This paper presents an alternative characterization approach based on evaluating the load impedances analytically at the desired harmonic frequencies for a high electron mobility transistor (HEMT) in terms of the internal and package elements of the active device. It additionally provides a method for extracting the parasitic elements of the power device as well as determining the optimum load-line resistance using the transistor manufacturer’s large signal model. A new topology for the output matching circuit is also proposed with its synthetic procedure to present the appropriate harmonic load impedances. To verify this methodology, a 900 MHz inverse class-F power amplifier circuit was designed and its performance was tested with the aid of the Keysight ADS software. The simulation results showed an output power of 38 dBm, a power gain of about 13 dB, DC-to-RF efficiency greater than 87%, and an acceptable level of linearity for both GSM and CDMA modulated signals.

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Section: Design Of the Matching Networkmentioning

confidence: 99%

An Analytic Design Approach to Inverse Class-F RF Power Amplifiers

Ali

Al-Muifraje

Saeed

2020

ETJ

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“…Notice that, the tunable elements will introduce additional power loss. Therefore, advanced methods for designing the passive matching networks were developed to implement high efficiency DBPAs 13–18 . In 2014, the authors proposed a synthesis method of dual‐band matching networks for designing DBPAs, and a DBPA prototype operating at 0.8 and 1.9 GHz was realized 13 .…”

Section: Introductionmentioning

confidence: 99%

“…To improve the DE of a DBPA, harmonic load impedance should be well controlled 15,19–25 . In 2018, Huang et al 15 designed a harmonic‐tuned DBPA that achieves DEs of 76.2% and 71.6% at 1.8 and 2.65 GHz, respectively.…”

Section: Introductionmentioning

confidence: 99%

Design of a dual‐band power amplifier over an octave bandwidth employing dual‐band resonators

Liu

Liu²,

Shao³

et al. 2023

Int J Numerical Modelling

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In this article, a compact dual‐band resonator is proposed for designing dual‐band power amplifiers (DBPAs). The proposed resonator has the characteristics of the band‐pass filters, suppressing the out‐of band signals. It is illustrated the proposed resonator has a simple circuit topology without sacrificing the performances of the DBPA. To verify the methodology, a high efficiency DBPA prototype operating at 1.72 and 3.48 GHz is fabricated and measured. The DBPA obtains a bandwidth of 100 and 50 MHz at the low and high frequency bands, respectively. The measurement results show that the DBPA delivers a saturation power of 43.1 and 40.8 dBm at 1.72 and 3.48 GHz, respectively. The measured drain efficiencies of the DBPA are 75.4% and 68.6% at 1.72 and 3.48 GHz, respectively. Meanwhile, when the DBPA is stimulated by a 20 MHz LTE signal with a peak to average power ratio (PAPR) of 7 dB, the measured adjacent channel leakage ratios are lower than −50 dBc at both 1.72 and 3.48 GHz after digital predistortion.

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“…Especially for the radio frequency (RF) power amplifier (PA), the related performances as efficiency, bandwidth, and so on, which has a very important impact on the signal transmission quality of the communication system. Recently, many highefficiency switch-mode PAs have been reported, for example, class-E, [3][4][5] class-F, [6][7][8] and inverse class-F. [9][10][11] In theory, their efficiency can reach 100% by shaping the voltage and current waves, but their bandwidth is very narrow. To expand the bandwidth of the PAs, a series of continuous mode PAs have been proposed and proven.…”

Section: Introductionmentioning

confidence: 99%

Design of a broadband bandpass filtering power amplifier for 5G communication

Jian

Liu

Cheng

2022

Micro & Optical Tech Letters

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This paper presents a broadband power amplifier (PA) based on a bandpass filtering (BPF) matching network. Terminated coupled line structure (TCLS) is employed to realize the broadband BPF matching network and ensure high selectivity, which also can achieve impedance transformation for PA. In addition, a harmonic control network is added in front of the TCLS to improve the efficiency of PA. To verify the effectiveness of the proposed method, a broadband bandpass filtering PA is designed and fabricated. The measured results show that the output power is from 39.5 to 41.6 dBm and the drain efficiency is between 58.8% and 72% in 3.3–3.7 GHz. These superior performances illustrate that the implemented filtering power amplifier can be applied well in 5G communication.

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Design of inverse Class‐F power amplifier based on dual transmission line with 87.4% drain efficiency

Cited by 6 publications

References 10 publications

An Analytic Design Approach to Inverse Class-F RF Power Amplifiers

An Analytic Design Approach to Inverse Class-F RF Power Amplifiers

Design of a dual‐band power amplifier over an octave bandwidth employing dual‐band resonators

Design of a broadband bandpass filtering power amplifier for 5G communication

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