Design of L-band microwave oscillators

Ain, M.F.; Lancaster, M.J.; Gardner, P.

doi:10.1109/hfpsc.2001.962153

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…This technique was applied both to BJT [17] and FET [18] oscillator circuits. Microstrip resonators were also used in negative resistance microwave oscillator circuits employing either GaAs FET or bipolar devices [19].…”

Section: Related Workmentioning

confidence: 99%

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Effect of Load Impedance on the Performance of Microwave Negative Resistance Oscillators

Al-Raie¹,

Jasim²

2021

Al-Rafidain J Sci

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In microwave negative resistance oscillators, the RF transistor presents impedance with a negative real part at either of its input or output ports. According to the conventional theory of microwave negative resistance oscillators, in order to sustain oscillation and optimize the output power of the circuit, the magnitude of the negative real part of the input/output impedance should be maximized. This paper discusses the effect of the circuit’s load impedance on the input negative resistance and other oscillator performance characteristics in common base microwave oscillators. New closed-form relations for the optimum load impedance that maximizes the magnitude of the input negative resistance have been derived analytically in terms of the Z-parameters of the RF transistor. Furthermore, nonlinear CAD simulation is carried out to show the deviation of the large-signal optimum load impedance from its small-signal value. It has been shown also that the optimum load impedance for maximum negative input resistance differs considerably from its value required for maximum output power under large-signal conditions. A 1.8 GHz oscillator circuit has been designed and simulated using a typical SiGe hetero-junction bipolar transistor (HBT) to verify the proposed approach of analysis.

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Section: Related Workmentioning

confidence: 99%

“…The schematic diagram of the final oscillator circuit is presented in Figure (19). As shown from this figure, the transmission line sections were implemented using Microstrip lines.…”

Section: Performance Evaluation Of Oscillator Circuitmentioning

confidence: 99%

Effect of Load Impedance on the Performance of Microwave Negative Resistance Oscillators

Al-Raie¹,

Jasim²

2021

Al-Rafidain J Sci

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“…this rather symmetric resonator has been used in the feedback path and it is shown in the "Fig. 3" [1].…”

Section: Feedback Oscillatormentioning

confidence: 99%

Design of S-Band Oscillators by Using GaAs ED02AH 0.2-μm Technology

Najafabadi

Nemati

Dousti

2011

AMR

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The S band limits from 2 to 4 GHz, is part of the electromagnetic spectrum’s microwave band. It is used by radars, satellites and some communications. This paper is concerned with the theory and design of 3 GHz feedback type and negative resistance oscillators by using Aiglent ADS software simulator with GaAs ED02AH 0.2-μm technology, and comparison of their results. A lumped element resonator has used in the design of feedback type oscillator and a negative resistance oscillator has utilized a microstrip resonator. The negative resistance oscillator operates at 3.072 GHz with phase noise levels at -99.49 dBc/Hz and -119.6 dBc/Hz at 100KHz and 1 MHz offset frequencies respectively. The phase noise levels of feedback type oscillator are -83.30 dBc/Hz and -103.3 dBc/Hz at 100KHz and 1 MHz offset at oscillation frequency of 3 GHz. Furthermore, we compared the output power of these oscillators and negative resistance oscillator showed 7.124 dBm, and feedback type oscillator presented -10.707dBm.

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