Design of low noise CMOS OEIC for blu-ray disc optical storage systems

Giardina, M.; Stek, A.; Jong, G.W. de; Bergervoet, J.

doi:10.1109/esscir.2004.1356670

Cited by 3 publications

(2 citation statements)

References 6 publications

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“…These days, the DVD optical pickup uses red laser diodes with a wavelength of 650nm, and the bluray uses even shorter wavelength 405nm. The UV/blue laser wavelength makes more small spot size than that of DVD [1]. Therefore, there is a big difference of the data storage capability between DVD(4.7GB) and blu-ray(25GB).…”

Section: Introductionmentioning

confidence: 96%

Triple wavelength OEIC with improved optical responsivity

Park

Jeong

et al. 2009

SPIE Proceedings

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OEICs for the advanced optical storage systems are required to be compatible with three kinds of disk systems, CD (λ=780nm), DVD (λ=650nm) and bluray disk (λ=405nm). In this paper we present a triple wavelength OEIC with improved isolation areas between adjacent photodiodes, which minimize the dark areas for 405nm laser beam and also improve the effective photodiode areas for 650nm and 780nm laser beams. The isolation area is made not with pwell and pbur layer but with floated p+ for increasing the resistance between adjacent photodiodes. The IC was developed in 0.6um BiCMOS technology with integrated N+ finger type photodiodes. A 3-dB frequency response of 163MHz and a sensitivity of 22mV/uW at the blue laser spectral range (405nm) have been measured. A power consumption of 115mW at 5V supply is low enough for the commercial bluray pickup unit, and a chip area of 2.88mm 2 is achieved. We have got good jitter performance of 6.8% at the commercial bluray systems.

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Section: Introductionmentioning

confidence: 96%

Triple wavelength OEIC with improved optical responsivity

Park

Jeong

et al. 2009

SPIE Proceedings

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“…3 using 0.18 µm CMOS technology by Giardina et al (2006). The proposed LNA contains a current mirror, an amplifier stage and an inverting stage.…”

Section: Current Mirrormentioning

confidence: 99%

A low-noise current preamplifier in 120 nm CMOS technology

2008

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Abstract. In this paper we examine the impact of deep submicron CMOS technology on analog circuit design with a special focus on the noise performance and the ability to design low-noise preamplifiers. To point out, why CMOS technology can grow to a key technology in low-noise and highspeed applications, various amplifier stages, applied in literature, are compared. One, that fits as a current preamplifier for low-noise applications, is the current mirror. Starting from the basic current mirror, an enhanced current preamplifier is developed, that offers low-noise and high-speed operation. The suggested chip is realized in 0.12 µm CMOS technology and needs a chip area of 100 µm×280µm. It consumes about 15 mW at a supply voltage of 1.5 V. The presented current preamplifier has a bandwidth of 750 MHz and a gain of 36 dB. The fields of application for current preamplifiers are, for instance, charge amplifiers, amplifiers for low-voltage differential signaling (LVDS) based point-to-point data links or preamplifiers for photodetectors.

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A Low-Noise Current Preamplifier in 120NM CMOS Technology

Uhrmann

Zimmermann

2007

2007 14th International Conference on Mixed Design of Integrated Circuits and Systems

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Design of low noise CMOS OEIC for blu-ray disc optical storage systems

Cited by 3 publications

References 6 publications

Triple wavelength OEIC with improved optical responsivity

Triple wavelength OEIC with improved optical responsivity

A low-noise current preamplifier in 120 nm CMOS technology

A Low-Noise Current Preamplifier in 120NM CMOS Technology

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