Design of low power UWB LNA based on common source topology with current-reused technique

Hsu, Meng‐Ting; Chang, Yi-Cheng; Huang, Yishuo

doi:10.1016/j.mejo.2013.08.008

Cited by 35 publications

(4 citation statements)

References 11 publications

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“…3b, as drain current I dsat increases, g m of the transistor increases and C g decreases slightly. Therefore, we can see that according to (5), f T increases with I dsat , which is a good agreement between theoretical and simulation results.…”

Section: Drain Current Optimizationsupporting

confidence: 81%

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A 11.2 mW 48–62 GHz Low Noise Amplifier in 65 nm CMOS Technology

Feng

et al. 2015

Circuits Syst Signal Process

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In this paper, a wideband low noise amplifier (LNA) for 60 GHz wireless applications is presented. A single-ended two-stage cascade topology is utilized to realize an ultra-wideband and flat gain response. The first stage adopts a currentreused topology that performs the more than 10 GHz ultra-wideband input impedance matching. The second stage is a cascade common source amplifier that is used to enhance the overall gain and reverse isolation. By proper optimization of the currentreused topology and stagger turning technique, the two-stage cascade common source LNA provides low power consumption and gain flatness over an ultra-wide frequency band with relatively low noise. The LNA is fabricated in Global Foundries 65 nm RFCMOS technology. The measurement results show a maximum S 21 gain of 11.4 dB gain with a −3 dB bandwidth from 48 to 62 GHz. Within this frequency range, the Circuits Syst Signal Process measured S 11 and S 12 are less than −10 dB and the measured DC power consumption is only 11.2 mW from a single 1.5 V supply.

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Section: Drain Current Optimizationsupporting

confidence: 81%

“…This paper discusses one ultra-wideband LNA design based on current-reused topology and stagger tuning technique [5,7,12,14]. By proper optimization, the LNA achieves a −3 dB bandwidth from 48 to 62 GHz.…”

Section: Introductionmentioning

confidence: 99%

A 11.2 mW 48–62 GHz Low Noise Amplifier in 65 nm CMOS Technology

Feng

et al. 2015

Circuits Syst Signal Process

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“…One of the best criteria for comparison of LNAs performances is figure of merit (FOM) formulas. A conventional formula [17] for FOM is described in (5). In this relation, F, is noise figure and Pd, is DC power consumption of LNA [17].…”

Section: Fig 6 Stability Circles Situation In Smith Chartmentioning

confidence: 99%

A High Gain Broadband Low Noise Amplifier for Wireless Networks

Ghazanfari¹,

Niya²,

Razaghian³

2016

IOSR

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“…In [8], the two-stage LNA using current-reused technique is designed and optimised the width of transistors in order to improve operation; but the CG structure is used in the first stage to widened the bandwidth and consequently the NF is increased. In [9], two different LNA topologies based on the current-reused technique are presented, but employing several on-chip inductors make the chip area larger. LNA performance can be enhanced in case of ameliorating the third-order intercept point (IIP3) and creating a variable gain or reconfigurable method in the previous structures [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Two‐stage current‐reused variable‐gain low‐noise amplifier for X‐band receivers in 65 nm complementary metal oxide semiconductor technology

Nikbakhsh¹,

Abiri²,

Ghasemian³

et al. 2018

IET Circuits, Devices & Systems

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In this study, a variable gain low noise amplifier (VG-LNA) working at X band is designed and simulated in 65 nm complementary metal oxide semiconductor technology. A two-stage structure is used in the proposed VG-LNA. Besides, the current-reused technique causes a higher gain without consuming extra power. As an on-chip voltage (V cnt) is changed, the gain continuously and almost linearly varies. The highest gain is 27.8 dB that can be reduced to 8.3 dB almost linearly and continuously as the control voltage is increased. The lowest value of S11 is −28.2 dB at 10 GHz. Also, NF is <2.75 dB at the operating frequency range; while NF min = 1.8 dB. The highest value of third-order intercept point is 2.03 dBm that always remain larger than −10.1 dBm. The basic advantage of this structure in comparison with other similar works is that not only the key parameters remain fixed with reduction of gain, but also the operation range of V cnt is widened from 0.3 V to V dd in order to extend the gain control range to 19.5 dB. Moreover, these results are achieved in a situation that the proposed VG-LNA draws only 3.9 mA from a 1.2 V.

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Design of low power UWB LNA based on common source topology with current-reused technique

Cited by 35 publications

References 11 publications

A 11.2 mW 48–62 GHz Low Noise Amplifier in 65 nm CMOS Technology

A 11.2 mW 48–62 GHz Low Noise Amplifier in 65 nm CMOS Technology

A High Gain Broadband Low Noise Amplifier for Wireless Networks

Two‐stage current‐reused variable‐gain low‐noise amplifier for X‐band receivers in 65 nm complementary metal oxide semiconductor technology

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