Design of multi-channel heterostructures for GaN devices

Abstract

The emerging multi-channel GaN architecture offers great opportunities in high-performance devices, whose performance is fundamentally determined by the density and distribution of electrons among the parallel multi-channels. In this work, we present approaches to design multi-channel GaN heterostructures based on a proposed physical-based model and experimental results. The model presents excellent accuracy based on comparisons with TCAD and experimental results. Impacts of key designing parameters upon the 2DEG density and the distribution of electrons were systematically investigated within undoped and doped multi-channels, presenting a criterion to determine the maximum channel thickness and evaluate the multi-channel design, and offering a design guideline to design and optimize a multi-channel-GaN heterostructure for a given targeted application.