Design of negative capacitance tunneling field effect transistor with dual-source U-shape channel, super-steep subthreshold swing and large on-state current

Wang, Shaoxi; Chen, Xian; Pan, Yumei; Jia, Qingrui; Yin, Yue; Wu, Yupan; Wang, Yucheng; Li, Wei

doi:10.1016/j.spmi.2021.106905

Cited by 8 publications

(2 citation statements)

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“…Due to the limitation of SS (60 mV/dec) at room temperature, detrimental effects, such as short channel effect, higher off-state current (I off ) and subthreshold swing, would appear in the continuous miniaturization of complementary MOS technology [ 1 , 2 ]. It is no longer feasible to reduce power consumption by lowering the supply voltage [ 3 , 4 ].…”

Section: Introductionmentioning

confidence: 99%

“…Saeidi et al [ 17 ] presented a ferroelectric planner TFET with a minimal subthreshold swing. A novel silicon-based dual source U-shaped channel TFET with negative capacitance (NCDU-TFET) was proposed by Wang et al [ 2 ] However, these studies only consider the effects of remnant polarization, coercive electric field and ferroelectric layer thickness on device performance. In the actual ferroelectric layer, the polarization gradient effect is also very important, it should not be ignored.…”

Section: Introductionmentioning

confidence: 99%

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Polarization Gradient Effect of Negative Capacitance LTFET

et al. 2022

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In this paper, an L-shaped tunneling field effect transistor (LTFET) with ferroelectric gate oxide layer (Si: HfO2) is proposed. The electric characteristic of NC-LTFET is analyzed using Synopsys Sentaurus TCAD. Compared with the conventional LTFET, a steeper subthreshold swing (SS = 18.4 mV/dec) of NC-LTFET is obtained by the mechanism of line tunneling at low gate voltage instead of diagonal tunneling, which is caused by the non-uniform voltage across the gate oxide layer. In addition, we report the polarization gradient effect in a negative capacitance TFET for the first time. It is noted that the polarization gradient effect should not be ignored in TFET. When the polarization gradient parameter g grows larger, the dominant tunneling mechanism that affects the SS is the diagonal tunneling. The on-state current (Ion) and SS of NC-LTFET become worse.

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