Design of neutron detector by using a novel superconductor MgB2

Takahashi, Kenichi; Satoh, Kazuo; Yotsuya, Tsutomu; Okayasu, Satoru; Hojou, K.; Katagiri, Masaki; Saito, Atsushi; Kawakami, Akira; Shimakage, Hisashi; Wang, Zhen; Ishida, Toshimasa

doi:10.1016/s0921-4534(03)00991-2

Cited by 32 publications

(15 citation statements)

References 5 publications

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“…Takahashi et al [28], propose a detector based on superconducting MgB 2 formed in a thin serpentine strip on a sapphire substrate. The basic scheme is to monitor the resistance of the MgB 2 strip while it is irradiated by neutrons.…”

Section: Cryogenic Detectorsmentioning

confidence: 99%

“…Silicon is useful as a semiconductor detector owing to the 28 Si(n, p) and 28 Si(n, α) reactions, and to the state of the art of manufacturing, enabling the fabrication of devices with surface areas of hundreds of square millimetres. Unfortunately, since the above-mentioned reactions have small cross sections (peak values are ~300 mb [36]), silicon diodes typically are not more than a few mm thick, and the reactions have thresholds near 3 and 4 MeV, respectively, silicon finds application in high flux, high energy environments.…”

Section: Semiconductor Detectorsmentioning

confidence: 99%

“…They were able to identify peaks in the pulse height spectrum from alpha particles leaving 25 Mg in its ground state and first four excited states, 28 Al in its ground state and first eight excited states (although not all were resolved), and 26 Mg in its ground and first excited states. The latter species arises from the 29 Si(n, α) reaction; 29 Si making up 4.7% of the natural.…”

Section: Semiconductor Detectorsmentioning

confidence: 99%

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Neutron detection with cryogenics and semiconductors

Bell

Carpenter

Cristy

et al. 2005

phys. stat. sol. (c)

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PACS 29.30.Hs, 29.40.Vj, 29.40.Wk The common methods of neutron detection are reviewed with special attention paid to the application of cryogenics and semiconductors to the problem. The authors' work with LiF-and boron-based cryogenic instruments is described as well as the use of CdTe and HgI 2 for direct detection of neutrons. 1 Introduction Advances in materials and methods have enabled the detection of radiation by means today that would have seemed, to pioneers in the field a century ago, like science fiction. Improvements in technology have resulted, for gamma ray detection, in high-purity germanium operating at 77 K and providing 0.1% energy resolution above 1 MeV, more than an order of magnitude improvement over what was (and still is) achievable by scintillators. However, operating below 1 K, cryogenic calorimeters have been used in X-ray astronomy, in the search for dark matter, and more recently in gamma ray spectroscopy, and have achieved better than 70 eV resolution at 60 keV [1], a factor of 4 to 5 improvement over what can be achieved by germanium at that energy. Meanwhile, at the other end of the temperature spectrum, the development of new, wide band-gap semiconductors has sparked research in room temperature gamma ray detectors and has held out the hope of 1 -2% resolution and freedom from cryogenics [2,3].With such results being reported from the X-and gamma ray world it is natural to examine the possibilities for neutron detection. A cryogenic neutron detector would operate by detecting the heat pulses caused by neutron capture and scattering, while a semiconducting detector would detect the nuclear reaction products from a sensitizer (for example, fission fragments detected in a 235 U-coated Si diode) or from some constituent of the semiconductor.In the following sections, the common methods of neutron detection are described and their deficiencies with respect to neutron spectroscopy at energies above thermal (0.025 eV) are outlined. Published work on neutron-detecting cryogenic calorimeters will be reviewed and work by the present authors on boron-and lithium-based instruments will be discussed. Turning to semiconductors, we review work with coated and native (uncoated) semiconductor, including Cd 1-x Zn x Te (CZT) and HgI 2 , as applied to neutron detection. Results obtained by the authors with HgI 2 will be shown.

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Section: Cryogenic Detectorsmentioning

confidence: 99%

Section: Semiconductor Detectorsmentioning

confidence: 99%

Section: Semiconductor Detectorsmentioning

confidence: 99%

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Neutron detection with cryogenics and semiconductors

Bell

Carpenter

Cristy

et al. 2005

phys. stat. sol. (c)

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“…In our preceding works [4][5][6][7][8][9][10][11][12][13][14][15][16], we found that the pulsed laser irradiation is a good test to simulate the neutron interaction. In fact the signal form following a neutron capture was found to be very similar to that observed when the detector was irradiated by a pulsed laser beam of proper power [15].…”

Section: Detector and Measurement Systemmentioning

confidence: 99%

“…One of the interesting ideas for utilizing MgB 2 is the design of a superconducting single neutron detector (SSND) [4][5][6][7][8][9][10][11][12][13][14][15][16]. This detector is based on the neutron capture by the nuclear reactions of a single neutron and the 10 B in MgB 2 .…”

Section: Introductionmentioning

confidence: 99%

Position Dependent Response of Superconducting MgB2 Neutron Detectors Studied by Pulsed Laser Irradiation

et al. 2012

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The MgB 2 detector consists of 200 nm thick MgB 2 thin film meander structure of 3 µm line width protected by 300 nm thick SiO layer. The electrical connections were provided by 150 nm thick Nb. The devices were placed in a 4 K refrigerator to investigate the behavior at temperatures below T c . The position-dependent response of the MgB 2 detector can be investigated by scanning a laser spot with the T. Ishida ( ) · I448 J Low Temp Phys (2012) 167:447-454 aid of the XY Z piezo-driven stage and an optical fiber with a focusing lens. We found that the inhomogeneity in a detector is very critical to specify the detection efficiency since the detector has the sensitivity only in a narrow temperature regime near T c .

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