Abstract:This paper discusses the design of radiating K-band oscillators with high electron-mobility transistors (HEMT's) as active devices. In order to allow monolithic integration, the design is based on a uniplanar microstrip configuration, i.e., all terminals of the passive microstrip circuit are located on top of the substrate and no via-holes are needed. In this configuration, feeding of the microstrip lines is incompatible to the fundamental quasi-TEM microstrip mode. Moreover, the radiation losses of these so-c… Show more
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