Design of reconfigurable antenna by capacitive type RF MEMS switch for 5G applications

Sravani, K. Girija; Prathyusha, D.; Prasad, G. R. K.; Chand, Ch. Gopi; Kumar, Prem; Guha, Koushik; Rao, K. Srinivasa

doi:10.1007/s00542-020-04958-8

Cited by 11 publications

(2 citation statements)

References 19 publications

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“…By reducing the number of connectors or selecting low insertion loss devices we can achieve low insertion loss. As power is expensive at greater frequencies, electromechanical switches provide the lowest possible loss along the transmission line [18][19][20]. The S-parameters of return, insertion, and isolations are shown in Figs.…”

Section: Rf-performance Analysismentioning

confidence: 99%

Design, Analysis and Simulation of RF MEMS Capacitive Shunt Switch with Perforations for Ka-Band Applications

Rao

Sravani

Chowdary

et al. 2021

Trans. Electr. Electron. Mater.

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This paper presents the design and analysis of an RF MEMS Shunt switch with low pull-in voltage and good RF performance. The switch includes a vertically deforming beam which includes perforations and meanders. This switch is developed to run at a Radio Frequency (RF) of 35 GHz. The significant accomplishments in this work are the pull in voltage that is minimized to 3.72 V, and the return loss is listed below − 26.6 dB, the insertion loss is listed less than − 0.22 dB and isolation is − 36.4 dB. The up and down capacitance of the switch is 110 fF, 1.58 pF, and the obtained capacitance ratio is 113.5. The product utilized for the CPW line is Gold (Au). The dielectric product utilized in between the beam and the CPW transmission line is Silicon Nitride (Si 3 N 4 ). We achieved electromechanical analysis through COMSOL software and RF analysis is done using HFSS software.

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Section: Rf-performance Analysismentioning

confidence: 99%

Design, Analysis and Simulation of RF MEMS Capacitive Shunt Switch with Perforations for Ka-Band Applications

Rao

Sravani

Chowdary

et al. 2021

Trans. Electr. Electron. Mater.

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“…Nowadays, the theory of RF MEMS switches has obtained rapid development. Many designs have achieved better isolation at large bandwidth but at a cost of a high pull-down voltage of 10-40V [5][6][7][8][9][10][11][12][13][14][15][16]. The electrostatic drive switches are hard to integrate into CMOS chip systems reason of high actuation voltages.…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of a novel RF MEMS switch with low pull-down voltage, high return loss, and high isolation at 10- 60GHz

Zhou

Deng

et al. 2023

Preprint

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This paper presents a novel radio frequency micro-electro-mechanical systems (RF MEMS) switch fabricated on a high resistivity silicon substrate. Slots, like square interleaved slots and split-ring slots, are used in the transmission-line to get better RF performance. Comparing three switch structures with different slot cells, the switch with square interleaved slots is suitable at Ka-band (26 ~ 40GHz), but the switch with split-ring slots can be applied to RF circuits at 10-60GHz. The switch with split-ring slots is optimal for the switching mechanism in diverse 5G RF circuitry. When it works at 30GHz, it shows a low insertion loss better than − 0.256dB, a low re-turn loss better than − 22dB, and the isolation is observed below − 39dB. Its “pull-down” voltage is 6.5V. Due to its outstanding performance, the proposed RF MEMS switch is suitable for various applications.

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Design and simulation of RF-MEMS shunt switch for K-band applications

Sravani

2020

Microsyst Technol

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Design of reconfigurable antenna by capacitive type RF MEMS switch for 5G applications

Cited by 11 publications

References 19 publications

Design, Analysis and Simulation of RF MEMS Capacitive Shunt Switch with Perforations for Ka-Band Applications

Design, Analysis and Simulation of RF MEMS Capacitive Shunt Switch with Perforations for Ka-Band Applications

Analysis and design of a novel RF MEMS switch with low pull-down voltage, high return loss, and high isolation at 10- 60GHz

Design and simulation of RF-MEMS shunt switch for K-band applications

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