2016 16th Mediterranean Microwave Symposium (MMS) 2016
DOI: 10.1109/mms.2016.7803852
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Design of reconfigurable fractal antenna using pin diode switch for wireless applications

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Cited by 13 publications
(9 citation statements)
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“…In fact, the reconfigurability allows controlling the electric length of the antenna and allows generating frequency bands without changing the physical length of the antenna. Furthermore, it can be concluded that the proposed antenna has provided more flexibility in terms of controlling the frequency generated bands compared with the recently published works in [21][22][23][24][25]. The positions of the switches shown in Fig.…”
Section: Pin Diode Integrationmentioning
confidence: 82%
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“…In fact, the reconfigurability allows controlling the electric length of the antenna and allows generating frequency bands without changing the physical length of the antenna. Furthermore, it can be concluded that the proposed antenna has provided more flexibility in terms of controlling the frequency generated bands compared with the recently published works in [21][22][23][24][25]. The positions of the switches shown in Fig.…”
Section: Pin Diode Integrationmentioning
confidence: 82%
“…It is shown that the proposed design is compact (31 × 25 mm 2 ) and low cost, which uses only two PIN diodes to get more operating frequency bands. The realised typical size reduction, for our prototype antenna compared with other antenna structures reported in the literatures [21][22][23][24][25], is calculated. The reduction in volume (R v ) is calculated as reported in [33]…”
Section: Measured Results and Discussionmentioning
confidence: 99%
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“…Compared to the positive-intrinsic-negative (PIN) diode [5,6], micro-electro-mechanical systems (MEMS) [7,8], and gallium arsenide (GaAs) psuedomorphic high electron mobility transistor (pHEMT) [9,10], Silicon-oninsulator (SOI) CMOS process shares the important features of being fast, reliable, and highly integratable, and thus, becomes a preferred choice for switch applications [11,12,13,14]. The low break-down voltage and conductive substrate limit the standard bulk CMOS for RF switch applications [15,16,17].…”
Section: Introductionmentioning
confidence: 99%