The
huge theoretical capacity of 3580 mA h g–1 based
on alloying reactions with Li strongly motivates the use of
Si as a negative electrode material in the construction of Li-ion
batteries with high energy density. However, its poor electrical conductivity
and low Li+ diffusion coefficients as well as the significant
volume change in Si during lithiation/delithiation are the bottlenecks
for practical application. As one typical method for improving their
properties, impurity doping into Si has been considered; however,
many of them were amorphous or the impurity concentration against
depth direction was not homogeneous, which has complicated the understanding
of the effect of impurities on the lithiation/delithiation of Si.
In this work, we synthesized Si ingots heavily doped with P (2000
ppm) or B (1600 ppm) as a dopant using the Czochralski method, which
overcomes the above issues. In galvanostatic charge/discharge conditions
using slurry-type electrodes, the electrical conductivity increased
by 108 times compared to that of the undoped Si. The P-
(0.119 V) and B-doping (0.126 V) allowed the Li-insertion reaction
to occur at higher potentials compared to undoped Si (0.113 V). Even
when using 5 vol % fluoroethylene carbonate as a film-forming additive
and suppressing an excess volume change in Si during lithiation by
the limitation of a charge capacity of 1000 mA h g–1, the undoped Si showed poor cyclability. In contrast, the optimized
condition maximized the effect of the improved electrical conductivity
and the mechanical properties and thereby enabled the P-doped Si to
achieve an excellent performance for more than 300 cycles. Considering
the softer properties and the greater fracture toughness of the P-doped
Si (1514 HV and P–Si: 363.6 kJ mol–1) than
those of B-doped Si (1787 HV and B–Si: 317 ± 12 kJ mol–1), the mechanical properties and fracture toughness,
rather than electrical conductivity, make a significant contribution.