2020
DOI: 10.1155/2020/3597142
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Design of Strained Ge Schottky Diode on Si Substrate for Microwave Rectifier Circuit

Abstract: In recent years, wireless energy transmission technology has developed rapidly and has received increasing attention in the industry. For microwave wireless energy transfer system applications, Ge Schottky diodes as the core components of the rectifier circuit are commonly used. Compared with Ge semiconductor, strained Ge semiconductor on Si substrate has the advantages of compatibility with Si process, low cost, and high electron mobility. It is an ideal replacement material for Ge semiconductor applications.… Show more

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