Design of ultra‐low noise, wideband low‐noise amplifier for highly survival radar receiver

Abstract

High electron mobility transistors (HEMTs) play a crucial role in microwave low-noise amplifier (LNA) and are used in radar receiver, software defined radio and digital radio frequency. A novel technique is used to design and fabricate a highperformance wideband LNA for 5.4-5.9 GHz based on fully stabilised InGaAs pseudo-morphic HEMT (pHEMT) 0.15 µm technology. With the Agilent Advanced Design System simulation tool, a C-band (5.4-5.9 GHz) two-stage LNA using pHEMT based on monolithic microwave integrated circuit (MMIC) technology has been designed: noise figure <1 dB, power gain of 18 dB, output 1 dB compression >13 dBm and OIP3 >24 dBm, lower value of input/output return loss reflects the accuracy of impedance matching network at input and output sides of amplifier, full band unconditional stability. In this study, it is shown that the InGaAs pHEMT has the ability to handle high power to make it the perfect technology candidate for highly survival radar receiver component and survival up to 37 dBm input power level is demonstrated. The circuit based in the proposed technology shows comparable low noise figure, decent gain, with high dynamic range and high survivability. Finally, the simulation results and fabricated device results are in good agreement and superior than the earlier reported design.

A 1-5Ghz, Hybrid Mic Wideband LNA utilizing Microstrip Geometric Structure Variety for Performance Improvement

“…For transmission power PT from the source and the reflected power PR the return loss in dB as shown in Figure 8 and is given by [4], where, Fn are the noise factor and Gn are available power gain, individually of the n th phase. Note that both magnitudes need aid communicated as ratios, not clinched alongside decibels Figure 33.a shows centreline approach and the equivalent length (Leq) is equal to length ABC will be given by [12],…”

“…Figure 33.b shows Modified centreline approach and the equivalent length (Leq) is equal to length DEFG which shows actual current flow will be given by [12], According to figure 34.a, Due to deviation in current density that is high current density at edges and low current density at center of Microstrip Line current path will not follow the centreline path (ABC), but deviates towards the shortest path (MNO). For the unmitered right-angled bend the corrected current path by modifying the centreline path, equation (5), into a path following the inner edge more closely (DEFG) given by equation (6).…”

“…The equivalent length of the 50% mitered right-angled microstrip bend, Leqmit2 (WXYZ) , is now calculated as [12],…”

“…A wideband receiver design ought to have the capacity to get an extensive variety of frequency guidelines. This imperative is popular in light of the fact that it grants to diminish the chip region, spare expenses and decrease the RF front-end multifaceted nature [4,9].…”

“…The linearity decides how much tolerant is the LNA towards possible solid meddling blockers in the range [11][12][13].…”