Design of ultra-thin CZTS solar cells with indium selenide as buffer layer

Dey, Mrinmoy; Dey, Maitry; Alam, Samina; Gupta, Ashoke Kumar Sen; Das, Nipu Kumar; Matin, M. A.; Amin, Nowshad

doi:10.1109/ecace.2017.7913040

Cited by 9 publications

(2 citation statements)

References 16 publications

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“…In a study, the solar cell structure of SnO 2 /Zn 2 SnO 2 /CdS/MoTe 2 /ZnTe shows a performance of 25.16%, where the thickness of MoTe 2 was 1000 nm [22]. A similar two studies have been reported but introduced As 2 Te 3 and CZT instead of ZnTe and attained a PCE of 25.06% and 25.11%, respectively [23,24]. These results suggest that MoTe 2 -based solar cells have great potential to fabricate cost-effective and high-performance photovoltaic solar cells.…”

Section: Introductionmentioning

confidence: 68%

Performance analysis of p-MoTe₂/n-MoSe₂ -based bifacial solar cells with p⁺-N:Cu₂O as BSF layer by SCAPS-1D

Rajib,

Al Kafi,

Najesh

et al. 2024

Phys. Scr.

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Photovoltaic solar cells (PVSC) with Molybdenum telluride (MoTe2) have received considerable attention because of their wide range of absorption, along with the absence of dangling bonds at their surface. Here, MoTe2-based PVSC with a preliminary device structure of Al/ITO/n-MoSe2/p-MoTe2/Pt was designed and estimated its performance by using the solar cell capacitance simulator in one dimension software program (SCAPS-1D). The effect of different parameters like thickness, doping density, and interface defect density of each layer was also investigated. Our investigation reveals that a moderate thickness of ~1000 nm of MoTe2 and 500 nm of MoSe2, a higher concentration of more than 1017 cm-3 for both layers and moderate defect density of below 1014 cm-3 are favorable for the better PVSC device. The effect of integrating of p+-N:Cu2O layer in the MoTe2-based PVSC as a back surface field (BSF) layer was also taken into account to improve the device performance. We also evaluated the output parameters of the optimized Al/ITO/n-MoSe2/p-MoTe2/ p+-N:Cu2O/Pt PVSC with different series and shunt resistance, back-metal work function, and working temperature. Our analysis shows that minimum series resistance, higher shunt resistance, lower working temperature, and a high back-metal work function of more than 5.35 eV are advantageous for superior PVSC due to low recombination losses, low electrical losses, and better transport of charge carriers. The best performance of 28.75% with Jsc of 34.11 mA/cm2, Voc of 0.98 V, and FF of 86.3%, was achieved by optimizing all parameters. To further improve the device performance, the bifacial mode of optimized Al/ITO/n-MoSe2/p-MoTe2/p+-N:Cu2O/Pt was considered and the PV performance of the proposed bifacial-PVSC has been also studied by using SCAPS-1D. Compared to the mono-facial device, a bifacial-PVSC device shows better performance with the bifacial factor of 77.5%, bifacial gain of 14.78%, and a higher PCE of 32.17%.

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Section: Introductionmentioning

confidence: 68%

Performance analysis of p-MoTe₂/n-MoSe₂ -based bifacial solar cells with p⁺-N:Cu₂O as BSF layer by SCAPS-1D

Rajib,

Al Kafi,

Najesh

et al. 2024

Phys. Scr.

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“…A stable ohmic contact can reduce the back-contact interface recombination, which significantly improves the device's performance. CZTS has an electron affinity of 4.5 and a bandgap of 1.5 eV [26]. Thus, a higher work function metal is obligatory for a static ohmic contact, and Ni does provide the same.…”

Section: Back Contactmentioning

confidence: 99%

A Simulation-Based Investigation of Cu_2ZnSnS_4 Solar Cells with Graphene as a Window Layer

Yasmin¹,

Ferdous²,

Saha³

et al. 2021

Proceedings of International Exchange and Innovation Conference on Engineering &Amp; Sciences (IEICES)

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Graphene exhibits great mechanical, electrical, and optical properties, making it an imperative material to use as a window layer in a thin-film solar cell. The efficiency and fill factor of the Cu2ZnSnS4 (CZTS) solar cell are increased owing to the incorporation of graphene. Numerical modeling and Solar Cell Capacitance Simulator (SCAPS)-1D simulation have been explored on an efficient CZTS based thin-film solar cell via simulating the proposed structure (Graphene/ZnO/CZTS/Ni) to obtain a nature-friendly solar cell. Besides, the effects of the absorber layer's properties on cell performance parameters have been analyzed. In the proposed cell, the number of layers has been optimized using highly transparent graphene to reach enough sunlight intensity to the absorber layer and back contact. This paper also revealed the effect of temperature and found higher stability in the proposed cell. The optimized cell attributes Voc=0.85 V and Jsc=23.815 mAcm −2 , FF=84.68%, η=17.14%.

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SCAPS study on the effect of various hole transport layer on highly efficient 31.86% eco-friendly CZTS based solar cell

Ranjan,

Anand,

Tripathi

et al. 2023

Sci Rep

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Copper Zinc Tin Sulphide (CZTS) is a propitious semiconductor for active absorber material in thin-film solar cells (SCs). Here, SC architecture comprising FTO/ZnS/CZTS/variable HTLs/Au is discussed. Fluorine-doped tin oxide (FTO) and gold (Au) are used as front and back contacts, respectively. Zinc sulphide (ZnS) is used as an active electron transport layer (ETL), while different Cu-based materials (Cu2O, CuO, CuI, and CuSCN) are used as hole transport layers (HTL). A one-dimensional solar cell capacitance simulator (SCAPS-1D) is utilized to simulate the SC structure. Among different Cu-based HTLs, Cu2O is preferred as a potential candidate for high cell performance of CZTS-based SC. The effects of various layer parameters such as thickness, doping density, and carrier concentrations, electron affinity of HTL and absorber, respectively, are also discussed. After optimization of the device, variation of operating temperature and the effect of series and shunt resistance are also taken into consideration. The optimized results of thickness and acceptor concentration (NA) of absorber material are 1.5 µm and approx. 1.0 × 1019 cm−3, respectively. In addition, the function of HTL (with and without) in the designed SC structure is also studied. Capacitance–voltage (C–V) characteristics are also discussed to get an insight of built-in potential. We have achieved cell performances viz. efficiency = 31.86%, short circuit current density = 32.05 mA/cm2, open circuit voltage = 1.19 V, and fill factor = 83.37%.

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Design of ultra-thin CZTS solar cells with indium selenide as buffer layer

Cited by 9 publications

References 16 publications

Performance analysis of p-MoTe₂/n-MoSe₂ -based bifacial solar cells with p⁺-N:Cu₂O as BSF layer by SCAPS-1D

Performance analysis of p-MoTe₂/n-MoSe₂ -based bifacial solar cells with p⁺-N:Cu₂O as BSF layer by SCAPS-1D

A Simulation-Based Investigation of Cu_2ZnSnS_4 Solar Cells with Graphene as a Window Layer

SCAPS study on the effect of various hole transport layer on highly efficient 31.86% eco-friendly CZTS based solar cell

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Design of ultra-thin CZTS solar cells with indium selenide as buffer layer

Cited by 9 publications

References 16 publications

Performance analysis of p-MoTe2/n-MoSe2 -based bifacial solar cells with p+-N:Cu2O as BSF layer by SCAPS-1D

Performance analysis of p-MoTe2/n-MoSe2 -based bifacial solar cells with p+-N:Cu2O as BSF layer by SCAPS-1D

A Simulation-Based Investigation of Cu_2ZnSnS_4 Solar Cells with Graphene as a Window Layer

SCAPS study on the effect of various hole transport layer on highly efficient 31.86% eco-friendly CZTS based solar cell

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Performance analysis of p-MoTe₂/n-MoSe₂ -based bifacial solar cells with p⁺-N:Cu₂O as BSF layer by SCAPS-1D

Performance analysis of p-MoTe₂/n-MoSe₂ -based bifacial solar cells with p⁺-N:Cu₂O as BSF layer by SCAPS-1D