Design of X-band complementary metal-oxide semiconductor-based frequency-modulation continuous-wave sensor

Chang, Chun‐Ping; Wang, Sen; Wu, Hsien-Shun; Liang, Enzhi; Liu, An-Shyi; Tsai, Kun-Hung; Chiang, Meng-Ju; Yang, Ping; Wu, Y.-J.; Lee, H.; Tzuang, C.-K.C.

doi:10.1049/iet-cds.2008.0310

Cited by 5 publications

(2 citation statements)

References 13 publications

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“…Power amplifier is an essential component to complete wireless sensor networks (WSNs) [1][2][3][4]. Generally, power amplifiers occupy considerable chip area and consume the greatest amount of battery power among all RFICs [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Switching-Mode Cmos Power Amplifier Using a Differentially Coupled Series Inductor

Lee¹,

Park²

2019

PIER Letters

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In this work, we propose a compact CMOS power amplifier using a differentially coupled series inductor for motion detection radar applications. The proposed switching-mode power amplifier is designed with a cascode and differential structure. To realize a compact size matching network, a differentially coupled series inductor is used in the input matching network. In the proposed power amplifier, two typical spiral series inductors for the input matching network are replaced with a single differentially coupled series inductor. As a result, the used chip area of the differentially coupled series inductor is smaller than half that of a typical inductor for the given inductances of each inductor. Additionally, to obtain a high gain characteristic, we adapt modified mode-locking techniques for the power stage of the power amplifier. To verify the feasibility of the power amplifier, we design a 9.5-GHz power amplifier with a 130-nm RFCMOS process. We obtain saturation power of 15 dBm while the power-added efficiency is approximately 28%.

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Section: Introductionmentioning

confidence: 99%

Switching-Mode Cmos Power Amplifier Using a Differentially Coupled Series Inductor

Lee¹,

Park²

2019

PIER Letters

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“…Wireless sensor networks (WSNs) consisting of spatially distributed autonomous sensors to monitor physical or environmental conditions, such as temperature, sound, vibration, pressure, motion, or pollutants, have found numerous applications in fields diverse including military operations, health care, and industrial and consumer products; these applications include biomedical sensing, patient monitoring, remote diagnostics, and automation of equipment in industrial and residential premises . Through the development of these various applications, the market is continuing to expand, and research in this area is currently very active.…”

Section: Introductionmentioning

confidence: 99%

X‐band CMOS power amplifier with high efficiency for motion detection radar

Park

Lee

Park

2014

Micro & Optical Tech Letters

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This article describes a highly efficient X‐band CMOS power amplifier. To obtain high drain voltage for high power, instead of using the typical cascode structure, we use a common‐source structure with a long channel length transistor. Generally, to enable high operating speed at high frequency, smaller transistor technology is used, but we demonstrate that using large transistor technology is also possible. The proposed power amplifier is designed with transistors of 300‐nm channel length in a common‐source structure using a differential structure of RFCMOS technology. Consequently, the maximum output power is 19 dBm with a power added efficiency of 40.5% at an input power of 5 dBm. This RFCMOS power amplifier includes all matching circuits and biasing circuits, and no external components are required. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:2552–2557, 2014

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An integrated X-band FMCW radar transceiver in 130-nm CMOS technology

Chowdary¹,

Banerjee

2015

2015 IEEE MTT-S International Microwave and RF Conference (IMaRC)

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Design of X-band complementary metal-oxide semiconductor-based frequency-modulation continuous-wave sensor

Cited by 5 publications

References 13 publications

Switching-Mode Cmos Power Amplifier Using a Differentially Coupled Series Inductor

Switching-Mode Cmos Power Amplifier Using a Differentially Coupled Series Inductor

X‐band CMOS power amplifier with high efficiency for motion detection radar

An integrated X-band FMCW radar transceiver in 130-nm CMOS technology

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