Design optimisation of junctionless TFET biosensor for high sensitivity

Wadhwa, Girish; Kamboj, Priyanka; Raj, Balwinder

doi:10.1088/2043-6254/ab4878

Cited by 21 publications

(8 citation statements)

References 34 publications

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“…The HfO 2 layer experiences a electric field whenever a voltage is supplied to the gate electrode, which in turn modulates the concentration of carriers in the P-GaN nanowire. 14 This modulation of carriers leads to a change in the conductivity of the nanowire, which is reflected as a change in the current flowing through the device. Overall, the GaN GAA Nanowire FET with HfO 2 as the dielectric is a high-performance device that is used in various applications, including power electronics, radio frequency amplifiers, and optoelectronics.…”

Section: Schematic and Device Structuresmentioning

confidence: 99%

Drain Current and Transconductance Analysis of GaN GAA Nanowire FET with High K Dielectric

Singh,

Chaudhary,

Raj

2023

ECS J. Solid State Sci. Technol.

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This paper presents the GaN GAA nanowire FET analysis with high K dielectric. The new phase in the development of power semiconductor devices has begun with the introduction of the outstanding benefits of employing wide bandgap semiconductors like gallium nitride (GaN) in the development of sophisticated devices. This work has been carried out to evaluate drain current, electric field, electric potential, and transconductance with SiO2 and HfO2 as dielectric. There are several advantages of switching from silicon-based circuits to GaN-based ones The drain current analysis shows that the device with HfO2 gate dielectric has a higher ON/OFF ratio compared to the device with SiO2 gate dielectric. The transconductance analysis also shows that the device with HfO2 gate dielectric has a higher transconductance value of approximately 9.88 S compared to the device with SiO2 gate dielectric.

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Section: Schematic and Device Structuresmentioning

confidence: 99%

Drain Current and Transconductance Analysis of GaN GAA Nanowire FET with High K Dielectric

Singh,

Chaudhary,

Raj

2023

ECS J. Solid State Sci. Technol.

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“…It increases the leakage current of the device due to a wide range of threshold voltage fluctuations [13]. To overcome such shortcomings, dopingless techniques are introduced [14,15]. The doping-less approach is further subcategorized into two sections.…”

Section: Introductionmentioning

confidence: 99%

Simulation and Performance Evaluation of Charge Plasma Based Dual Pocket Biosensor using SiGe-Heterojunction TFET Design

Paul

2022

Silicon

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Conventional biosensor designs are often vulnerable to issues like random dopant fluctuations (RDFs) and high thermal budgets due to their design and the device they are based on. The main reason behind such issues is the complexity of maintaining uniform doping levels throughout the device structure. This manuscript investigates a biosensor structure utilizing a dual pocket junctionless SiGe-Heterostructured TFET design to overcome such shortcomings. The implementation of the doping charge plasma technique with the uniform doping of along an integrated SiGe-Heterostructure layer has improved the tunneling process while also effectively eliminating issues like random dopant fluctuations (RDF). Again the overall performance also depends on the sensitivity of the sensor design. Increasing the trapping area for biomolecules at the same technological node by increasing the pocket length or by adding a pocket region leads to rapid changes in the sensor’s electric properties owing to shifting dielectric constants (k) and charge densities (in both positive and negative situations), improving in the overall detection process. The influence of these parameters on the device’s Drain current, Surface Potential, Electron Tunneling Rate (ETR), Subthreshold Swing (SS), and I on /I off ratio is also explored. The introduction of the added pocket region gives us scalability while also showing a higher sensitivity of for a dielectric constant being 12 and neutrally charged while rising to nearly if the molecules are positively charged. With the improvement in drain current sensitivity due to the additional pocket and junctionless design, this work will undoubtedly give researchers a roadmap for the future generation of highly sensitive biosensor alternatives.

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“…A biosensor is a research tool that detects neutral/charged biological molecules like proteins, catalysts, and nucleotides in numerous contexts, such as in the medical field [1], the food industry [2], the -ISOMAP‖ process [3], the -examination of bio-molecules‖ [4], the -examination of medicinal molecules‖ [5], the observation of the environmental field [6], and the -inspection of criminal activity‖ [7]. -Biosensors based on contemporaryField Effect Transistors include, but are not limited to, the "ion-sensitive Field Effect Transistor (ISFET)", the "dielectric modulated Field Effect Transistor (DM-FET)", the "ARINC structure" [8,9], the radio frequency Sip [10], and the "tunnel field effect transistor (TFET)". The original transistor design by "Lilienfeld" [14] has been successfully expanded upon to create a new type of device called a "Junctionless Field Effect Transistor (JLFET)."…”

Section: Introductionmentioning

confidence: 99%

Design and Performance Assessment of Split Gate Dielectric Modulated Junction less TFET Variation of Hfo2 by the Divided Gate Insulator for High Sensitivity Using Tcad Simulation

Mandal¹

2022

MSEA

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A number of more recent discoveries in microbiology have made reliable identification of nano-biomolecules and extensive analyses of them necessary. A variety of proteins, including DNA, biotin-streptavidin, amino acids, as well as many types of bacteria and viruses, must be found and analyzed in order to fully comprehend any odd behavior occurring inside of live cells. Rapid testing and detection are essential steps in preventing undiscovered biohazards from eradicating the human race and other terrestrial living things. Since many decades ago, developing an accurate, affordable biosensor has been a struggle for scientists [1]. When compared to pricey laboratory-based sensors and detection methods, FET-based lab-on-chip nano biosensors appear to be a promising substitute. It is significantly more dependable than conventional bulk sensors because of its size, affordability, low power consumption, resilience, faster response time, and better sensitivity [1]. Due to their precision, adaptability, and compatibility with embedded systems, dielectrically modulated FET biosensors with Nano cavities are emerging as a promising research area that can yield useful data on bio-analyses. As an alternative to conventionally doped TFET devices, using a charge plasma SiGe-heterojunction double gate TFET, a label-free biosensor can be produced, bypassing the need for conventional semiconductors, which require a large thermal budget and are susceptible to random dopant fluctuations (RDFs). The effect of changing the dielectric constant (k), the positive and negative charge density, the gate work function, and the cavity size has been investigated to better understand how these factors affect the performance of the proposed biosensor. These parameters modify the biosensor's electric characteristics, improving detection [2]. There is also discussion of how these factors influence the device's drain current, electric field, surface potential, sub-threshold swing (SS), insulator-to-metal film (ION/IOFF) ratio, and electron tunneling rate (ETR). The sensitivity of the drain current in the proposed biosensor is also investigated. There is no restriction on whether or whether the proposed structure is used for charged or neutral molecules.Under lower supply voltages, it is discovered that the SG-DM current JLFET's sensitivity is high, measuring 1.2 *10^3, with a potential sensitivity of 1.4 V. A result, the SG-DM [2] JLFET exhibits good application potential while consuming little power and having ahigh sensitivity.

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Design optimisation of junctionless TFET biosensor for high sensitivity

Cited by 21 publications

References 34 publications

Drain Current and Transconductance Analysis of GaN GAA Nanowire FET with High K Dielectric

Drain Current and Transconductance Analysis of GaN GAA Nanowire FET with High K Dielectric

Simulation and Performance Evaluation of Charge Plasma Based Dual Pocket Biosensor using SiGe-Heterojunction TFET Design

Design and Performance Assessment of Split Gate Dielectric Modulated Junction less TFET Variation of Hfo2 by the Divided Gate Insulator for High Sensitivity Using Tcad Simulation

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