Design, optimization, and performance evaluation of GSST clad low-loss non-volatile switches

Song, Junchao; Ghosh, Souvik; Zhang, Hanyu; Zhou, Linjie; Rahman, B. M. A.

doi:10.1364/ao.58.008687

Cited by 18 publications

(5 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Given that these are newer platforms, there has not been a lot of progress in this direction, but they are promising. The Sb 2 S 3 -and GSSTbased switches reported lower insertion losses of 0.48 dB and 0.135 dB [47,155], device lengths of 8 µm and 5 µm, and extinction ratios of 30 dB and 20 dB, respectively. Sb 2 Se 3based modulators using ring resonators as the basic structure demonstrated an insertion loss of 0.45 dB and switching energy of 185 nJ for an electrically switched device [158].…”

Section: Chalcogenide Modulators and Switchesmentioning

confidence: 97%

“…Power consumption in GST-based systems is an important issue, which has led to some researchers exploring other platforms such as Sb 2 S 3 [45,47], Sb 2 Se 3 [158], and GSST [155] for switching and modulation applications. Given that these are newer platforms, there has not been a lot of progress in this direction, but they are promising.…”

Section: Chalcogenide Modulators and Switchesmentioning

confidence: 99%

See 1 more Smart Citation

On-Chip Integrated Photonic Devices Based on Phase Change Materials

Nisar

Yang

et al. 2021

Photonics

Self Cite

View full text Add to dashboard Cite

Phase change materials present a unique type of materials that drastically change their electrical and optical properties on the introduction of an external electrical or optical stimulus. Although these materials have been around for some decades, they have only recently been implemented for on-chip photonic applications. Since their reinvigoration a few years ago, on-chip devices based on phase change materials have been making a lot of progress, impacting many diverse applications at a very fast pace. At present, they are found in many interesting applications including switches and modulation; however, phase change materials are deemed most essential for next-generation low-power memory devices and neuromorphic computational platforms. This review seeks to highlight the progress thus far made in on-chip devices derived from phase change materials including memory devices, neuromorphic computing, switches, and modulators.

show abstract

Section: Chalcogenide Modulators and Switchesmentioning

confidence: 97%

Section: Chalcogenide Modulators and Switchesmentioning

confidence: 99%

On-Chip Integrated Photonic Devices Based on Phase Change Materials

Nisar

Yang

et al. 2021

Photonics

Self Cite

View full text Add to dashboard Cite

show abstract

“…In recent years, due to unique combination of optical properties upon phase change [23][24], many phase change materials such as Sb 2 S 3 [25], Sb 2 Se 3 [26], Ge 2 Sb 2 Se 4 Te 1 (GSST) [27], Ge 2 Sb 2 Te 5 (GST) [28] and VO 2 [29] have drawn more attention in the fields of optical absorption [30], modulation [31], filtration [32] and micro-display [26]. Though VO 2 shows discernible metal-to-insulator phase transition, it is volatile.…”

Section: Introductionmentioning

confidence: 99%

TiN-GST-TiN all-optical reflection modulator for the 2 µm wave band reaching 85% efficiency

Bhuiyan

Mitu²,

Choudhury³

2022

Appl. Opt.

View full text Add to dashboard Cite

In this study, we present an all-optical reflection modulator for the 2 µm communication band exploiting a nanogear-array metasurface and phase-change-material G e 2 S b 2 T e 5 (GST). The reflectance of the structure can be manipulated by altering the phase of GST by employing optical stimuli, and this paper provides details on the optical and opto-thermal modeling techniques of GST. A numerical investigation reveals that the metastructure exhibits a conspicuous changeover from ∼ 99 % absorption to very poor interaction with the operating light depending on the switching states of the GST, ending up with 85% modulation depth and only 0.58 dB insertion loss. Due to noticeable differences in optical responses, we can demonstrate a high extinction ratio of 28 dB and a commendable figure of merit of 49, so far the best modulation performance in this wavelength window, to our knowledge. In addition, real-time tracking of reflectance during phase transition manifests high-speed switching expending low energy per cycle, of the order of sub-nJ. Hence, given its overall performance, the device will be a paradigm for optical modulators for upcoming 2 µm communication technology.

show abstract

“…These advantages make the GSST a good candidate for thick and larger photonic structure devices such as optical switches, tunable filters, and modulators. [ 28,29 ]…”

Section: Introductionmentioning

confidence: 99%

Temporal Analysis of Photo‐Thermally Induced Reconfigurability in a 1D Gold Grating Filled with a Phase Change Material

Zamani

Hatef

Nadgaran

2021

Advcd Theory and Sims

View full text Add to dashboard Cite

In this study, the finite‐element method is used to numerically calculate a photo‐thermally induced reconfigurability in a 1D gold grating structure filled with the phase change material Ge2Sb2Se4Te1 (GSST). GSST features a reversible and stable phase change between amorphous and crystalline phases around a critical temperature of 410 K with broadband low optical loss. In this study, the required heating for the transition between phases is provided by a nanosecond Gaussian pulse laser through a photo‐thermal absorption process. A comprehensive heat transfer analysis is performed to investigate the thermal characterizations of the proposed structure. The results show that in the amorphous state, the structure has a near unity absorption band in the infrared region. As the temperature increases during the pulse, the GSST undergoes the amorphous to crystalline phase change. In the intermediate states (partial crystallization) of the GSST two resonance peaks are excited and the absorption finally reaches its minimum value of 0.2 in the GSST crystalline phase. The findings of this study not only provide the fundamental concepts for the suggested tunable structure, but also have potential applications in a variety of nanophotonic devices including thermal emission controllers, sensors, and optical detection devices.

show abstract

Design, optimization, and performance evaluation of GSST clad low-loss non-volatile switches

Cited by 18 publications

References 15 publications

On-Chip Integrated Photonic Devices Based on Phase Change Materials

On-Chip Integrated Photonic Devices Based on Phase Change Materials

TiN-GST-TiN all-optical reflection modulator for the 2 µm wave band reaching 85% efficiency

Temporal Analysis of Photo‐Thermally Induced Reconfigurability in a 1D Gold Grating Filled with a Phase Change Material

Contact Info

Product

Resources

About