Design optimization for 25 Gbit/s DML InGaAlAs/InGaAsP/InP SL-MQW laser diode incorporating temperature effect

Ke, Cheng; Li, Xun; Xi, Yanping; Yu, Yang

doi:10.1016/j.optcom.2017.07.010

Cited by 1 publication

(1 citation statement)

References 28 publications

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“…The composition-graded layer was first proposed in the GaAs/AlGaAs system, which is known as a graded-index separate confinement heterostructure (GRIN SCH) and has been well developed in InP and GaN systems [10][11][12][13]. The composition-graded layer epitaxy technique provides more flexibility for semiconductor device designs, e.g., the modification of the builtin electric field, bandgap profile, and refractive index profile [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

High-Power, High-Efficiency GaSb-Based Laser with Compositionally Linearly Graded AlGaAsSb Layer

et al. 2023

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We propose a novel graded AlGaAsSb layer growth method to achieve a super-linear interface by precisely controlling the cell temperature and valve position. Atomically smooth surface and lattice-matched epitaxy was confirmed by AFM and the HRXRD characterization of the graded AlGaAsSb layer sample. With the inserted graded layer between the cladding and waveguide layers, high-power, high-efficiency GaSb-based laser emitters and laser bars were confirmed. The linearly graded interface layer smooths the potential barrier peak between the cladding and waveguide layers, which resulted in a low turn-on voltage of 0.65 V and an ultra-low series resistance of 0.144 Ω. A maximum continuous-wave output power of 1.8 W was obtained with a high power conversion efficiency of 28% at 1.1 A and 12% at 8 A. A facet-coated laser bar was also fabricated with a record-high CW output power of 18 W. A high internal quantum efficiency of 83 was maintained at 40 °C, implying improved carrier injection efficiency, which benefits from the built-in electric field of the composition-graded AlGaAsSb layer.

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