Conference on Lasers and Electro-Optics 2022
DOI: 10.1364/cleo_at.2022.jw3b.145
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Design Optimization of a High-Speed Modified Uni-traveling-Carrier Photodiode

Abstract: We optimized an InGaAs/InP Modified Uni-Traveling-Carrier Photodiodes (MUTC-PDs) design with operation frequency above 200 GHz and responsivity greater than 0.14 A/W. Key device design parameters tradeoffs are systematically analyzed in depth.

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“…A challenge with typical PIN diode is how to maintain a large capacitive intrinsic region that is acceptable for wireless optical receiver, as illustrated and described with a reasonable solution by Sibley et al [1]- [3]. The main problem of receiver yield is the requirement to have a wide range of capacitive impedance handling at the same time.…”
Section: Introductionmentioning
confidence: 99%
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“…A challenge with typical PIN diode is how to maintain a large capacitive intrinsic region that is acceptable for wireless optical receiver, as illustrated and described with a reasonable solution by Sibley et al [1]- [3]. The main problem of receiver yield is the requirement to have a wide range of capacitive impedance handling at the same time.…”
Section: Introductionmentioning
confidence: 99%
“…Referring to Figure 1, Iph is photocurrent, Rbulk represents bulk resistance, Rb is the bias resistance an Cd represents capacitance device, Cs is stray capacitance. According to theory, Rbulk effect is assumed to be small [1]. Therefore, the equivalent circuit reduces to Iph parallel with Rb and (Cs + Cd).…”
Section: Introductionmentioning
confidence: 99%
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