Design Optimization of a PVDF based SOI-MOSFET Touch Sensor by Surface Potential based Analytical Model

Abstract

Analytical model of a single taxel silicon on insulator (SOI) MOSFET based touch sensor is presented. The proposed sensor has a piezoelectric polymer layer integrated into the transistor structure. A mathematical model of the channel surface potential is developed, and the device performance is evaluated for various contact forces. The surface potential-based model aids in the systematic design of model parameters and the analysis of overall sensor performance. The simulation and analytical results were compared and found to be highly compatible. The model was validated using the software MATLAB, 2D COMSOL Multiphysics, and Silvaco ATLAS. The article presents a detailed analysis of the effect of design parameters of MOSFET on the variation of surface potential of the proposed sensor and the optimal model developed had a maximum channel potential variation of 248 mV/N. As a result, the developed analytical model guides designing SOI-MOSFET parameters for touch sensing in prosthetic devices.