Design optimization of CdTe/Si tandem solar cell using different transparent conducting oxides as interconnecting layers

Isah, Mustapha; Rahman, Kazi Sajedur; Doroody, Camellia; Harif, Muhammad Najib; Rosly, Hasrul Nisham; Sopian, Kamaruzzaman; Tiong, Sieh Kiong; Amin, Nowshad

doi:10.1016/j.jallcom.2021.159351

Cited by 17 publications

(8 citation statements)

References 25 publications

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“…The interference patterns are then be observable in the QE simulation output. Table 1 shows the cell characteristics used in this work, which were defined based on the theoretical principles, experimental data, and available literatures [19][20][21][22].…”

Section: Modeling Proceduresmentioning

confidence: 99%

Elucidating the Effects of Interconnecting Layer Thickness and Bandgap Variations on the Performance of Monolithic Perovskite/Silicon Tandem Solar Cell by wxAMPS

et al. 2023

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In this study, we investigated the pathways for integration of perovskite and silicon solar cells through variation of the properties of the interconnecting layer (ICL). The user-friendly computer simulation software wxAMPS was used to conduct the investigation. The simulation started with numerical inspection of the individual single junction sub-cell, and this was followed by performing an electrical and optical evaluation of monolithic 2T tandem PSC/Si, with variation of the thickness and bandgap of the interconnecting layer. The electrical performance of the monolithic crystalline silicon and CH3NH3PbI3 perovskite tandem configuration was observed to be the best with the insertion of a 50 nm thick (Eg ≥ 2.25 eV) interconnecting layer, which directly contributed to the optimum optical absorption coverage. These design parameters improved the optical absorption and current matching, while also enhancing the electrical performance of the tandem solar cell, which benefited the photovoltaic aspects through lowering the parasitic loss.

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Section: Modeling Proceduresmentioning

confidence: 99%

Elucidating the Effects of Interconnecting Layer Thickness and Bandgap Variations on the Performance of Monolithic Perovskite/Silicon Tandem Solar Cell by wxAMPS

et al. 2023

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“…CdTe/Si has been demonstrated to have the potential to ameliorate the power conversion efficiency from the present limit of either single junction CdTe or Si-based solar cells [15][16][17][18]. This is because CdTe/Si tandem solar cell combines the absorption of the spectral range for both CdTe and Si into a single solar cell due to their favourably different bandgaps (Si bandgap = 1.120 eV and CdTe bandgap = 1.500 eV) [19].…”

Section: Introductionmentioning

confidence: 99%

“…Other features are bandgap narrowing analysis, field-dependent mobilities analysis, and transfer matrix method, as well as equipped with sub-cells analysis that enables the individual solar cells to be analysed and optimised separately [24]. A significant number of researchers have effectively used wxAMPS 3.0 software in their work [18,22,[25][26][27]. In this work, this numerical simulation software is used to check the potential use and impact of p ++ -ZnTe/p ++ -AZO as a tunnel junction in a CdTe/Si tandem structure which has the form of SnO2/n-CdS/p-CdTe/p ++ -ZnTe/n ++ -AZO/n-Si/p-Si/p+-Si/Al as shown in figure 1(b).…”

mentioning

confidence: 99%

A numerical analysis of ZnTe/AZO as tunnel junction in CdTe/Si tandem solar cell

Isah

Doroody²,

Rahman³

et al. 2023

IOP Conf. Ser.: Mater. Sci. Eng.

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Recently, interest has shifted towards developing multijunction or tandem solar cells due to their high potential to generate higher efficiency than traditional single-junction solar cells. Cadmium telluride (CdTe) and silicon (Si) solar cell materials have demonstrated significant potential in photovoltaic energy generation as tandem structures if fully developed. One approach for optimising CdTe/Si is to develop an effective tunnel junction that can electrically and optically interconnect the cadmium telluride and silicon cells with minimal loss. The wxAMPS 3.0 numerical simulation was used in this work to develop CdTe/Si tandem using zinc telluride/aluminium doped zinc oxide (ZnTe/AZO) as a tunnel junction (TJ). The result obtained shows an optimum efficiency of over 36 % with Voc = 1.945 V, Jsc = 21.519 mA/cm2, and FF = 86.823 % utilising the optimal 200 nm CdTe and Si absorber thickness of 300 μm. An analysis of the demonstrated results suggests that ZnTe/AZO tunnel junction will significantly contribute to the realisation of the CdTe/Si tandem solar cell. Hence, upon inserting a 40 nm highly doped ZnTe/AZO tunnelling junction to a CdTe/Si tandem configuration, the solar cell’s performance was enhanced by 48.190%.

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“…Due to its characteristics, CdTe has been regarded as the most suitable material for producing high-efficiency solar cells [1]. Besides, CdTe has direct band gap (~1.45 eV) with absorption coefficient (>10 5 cm -1 ) which fit to solar cell spectrum and can absorb more than 90% of incoming photon at thickness of 1000 nm [2] [3]. A transparent conductive oxide (TCO), CdS film, CdTe absorber, and back contact are the typical layers that make up a superstrate CdTe solar cell's conventional structure.…”

Section: Introductionmentioning

confidence: 99%

Numerical Simulation of Ultrathin CdTe Solar Cell by SCAPS-1D

Bhari

Rahman

Chelvanathan

et al. 2023

IOP Conf. Ser.: Mater. Sci. Eng.

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Cadmium telluride (CdTe) has been recognized as one of the efficient and cost-effective thin film solar cell materials with a direct band energy of 1.5 eV. CdTe has long been a leading material in fabrication of solar cell due to its high optical absorption coefficient and ideal band gap. Despite the advantages of CdTe PV technology, CdTe is facing the challenge of Te scarcity. However, it is possible to decrease the CdTe thickness without much compromise in efficiency. Reducing the absorber layer thickness can lower the cost and usage of materials. It can assist to produce large scale CdTe solar cell module as Te is not an earth-abundant element. Numerical simulation of thin film solar cell is a crucial process for defining the possibility of anticipated solar structures, predicting the impact of differences in material characteristics and geometry on overall efficiency. In this research, Solar Cell Capacitance Simulator (SCAPS-1D) is applied to explore the impact of absorber layer thickness and carrier concentration in realizing ultrathin CdTe solar cell. It has been found that 500 nm thick absorber layer is sufficient for acceptable range of cell efficiency. Simulation results of 500 nm CdTe with the carrier concentration of 1.0 × 1014 cm−3 has an efficiency of 2.2%. For CdTe carrier concentration of 1.0 × 1017 cm−3, the efficiency increases to 13.22% with open-circuit voltage of 0.988 V, a short-circuit current density of 16.19 mA/cm2 and fill factor of 82.54%. The optimal numerical solar cell design suggests an approach to further enhance the efficiency of CdTe solar cells.

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Design optimization of CdTe/Si tandem solar cell using different transparent conducting oxides as interconnecting layers

Cited by 17 publications

References 25 publications

Elucidating the Effects of Interconnecting Layer Thickness and Bandgap Variations on the Performance of Monolithic Perovskite/Silicon Tandem Solar Cell by wxAMPS

Elucidating the Effects of Interconnecting Layer Thickness and Bandgap Variations on the Performance of Monolithic Perovskite/Silicon Tandem Solar Cell by wxAMPS

A numerical analysis of ZnTe/AZO as tunnel junction in CdTe/Si tandem solar cell

Numerical Simulation of Ultrathin CdTe Solar Cell by SCAPS-1D

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