2005
DOI: 10.1109/ted.2004.841338
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Design Optimization of High Breakdown Voltage AlGaN–GaN Power HEMT on an Insulating Substrate for<tex>$R_rm ONAhbox --V_B$</tex>Tradeoff Characteristics

Abstract: High breakdown voltage AlGaN-GaN power highelectron mobility transfers (HEMTs) on an insulating substrate were designed for the power electronics application. The field plate structure was employed for high breakdown voltage. The field plate length, the insulator thickness and AlGaN layer doping concentration were design parameters for the breakdown voltage. The optimization of the contact length and contact resistivity reduction were effective to reduce the specific on-resistance. The tradeoff characteristics… Show more

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Cited by 88 publications
(38 citation statements)
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“…Additional metal as a field-plate (FP) on the gate and drain-electrodes can uniformly terminate those electric field resulting in high V BR [4,17,18]. The recess T-gate with its both side arms (FP) covers the electric field beneath the gate-corners and distributes them to the drain-side electrode.…”
Section: Tgdfp Design and DC Characteristicsmentioning
confidence: 99%
“…Additional metal as a field-plate (FP) on the gate and drain-electrodes can uniformly terminate those electric field resulting in high V BR [4,17,18]. The recess T-gate with its both side arms (FP) covers the electric field beneath the gate-corners and distributes them to the drain-side electrode.…”
Section: Tgdfp Design and DC Characteristicsmentioning
confidence: 99%
“…The distinction between the E L and E T fields and the various effects of the FP on these fields is important for the correct understanding of the breakdown channels in the HEMT. Previous simulation studies [4,5] of the FP effect in GaN/AlGaN HEMTs focused on the total electric field. Although the maximum value of E T field (about 1.75 MV/cm) is larger than the peak value of the E L field, the peak value of the normal component of the current density just under the FP edge is considerably smaller than the longitudinal, as is seen from Fig.…”
Section: Ganmentioning
confidence: 99%
“…5. As a result the electron energy gain is mainly due to longitudinal transport, which may eventually lead to breakdown via impact ionisation at higher drain biases [4,5].…”
Section: Ganmentioning
confidence: 99%
“…This is considered due to a decrease in surface-state effects. It is well recognized that the field plate can improve the breakdown voltage and the power performance, because the electric field at the drain edge of the gate is reduced (Karmalkar & Mishra, 2001;Ando et al, 2003;Xing et al, 2004;Saito et al, 2005;Pala et al, 2008). However, it is not well understood whether the field plate affects buffer-related lag phenomena and current collapse.…”
Section: Introductionmentioning
confidence: 99%